Inventor · disambiguated record
Byeongju Park
Also filed as: PARK BYEONGJU
36 granted patents·11 pending applications·931 citations·filing 1998–2024
98Inventor score
Top patents by PatentIndex Score
47 records- 0197US7411818B1Programmable fuse/non-volatile memory structures using externally heated phase change materialIBM·Filed 2007·Granted Aug 12, 2008·50 cites·5 claims
- 0297US6555891B1SOI hybrid structure with selective epitaxial growth of siliconIBM·Filed 2000·Granted Apr 29, 2003·129 cites·13 claims
- 0396US7714326B2Electrical antifuse with integrated sensorIBM·Filed 2007·Granted May 11, 2010·47 cites·20 claims
- 0495US7254078B1System and method for increasing reliability of electrical fuse programmingIBM·Filed 2006·Granted Aug 7, 2007·41 cites·21 claims
- 0595US6635543B2SOI hybrid structure with selective epitaxial growth of siliconIBM·Filed 2002·Granted Oct 21, 2003·79 cites·27 claims
- 0692US7633079B2Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change materialIBM·Filed 2007·Granted Dec 15, 2009·26 cites·20 claims
- 0790US7982285B2Antifuse structure having an integrated heating elementIBM·Filed 2008·Granted Jul 19, 2011·14 cites·20 claims
- 0888US7723820B2Transistor based antifuse with integrated heating elementIBM·Filed 2006·Granted May 25, 2010·17 cites·8 claims
- 0988US7432755B1Programming current stabilized electrical fuse programming circuit and methodIBM·Filed 2007·Granted Oct 7, 2008·20 cites·2 claims
- 1087US6359300B1High aspect ratio deep trench capacitor having void-free fillIBM·Filed 2000·Granted Mar 19, 2002·37 cites·9 claims
- 1186US8361887B2Method of programming electrical antifuseIBM·Filed 2012·Granted Jan 29, 2013·7 cites·8 claims
- 1286US6488778B1Apparatus and method for controlling wafer environment between thermal clean and thermal processingIBM·Filed 2000·Granted Dec 3, 2002·44 cites·52 claims
- 1386US6268621B1Vertical channel field effect transistorIBM·Filed 1999·Granted Jul 31, 2001·71 cites·7 claims
- 1486US6178660B1Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor waferIBM·Filed 1999·Granted Jan 30, 2001·85 cites·24 claims
- 1586US6180480B1Germanium or silicon-germanium deep trench fill by melt-flow processIBM·Filed 1998·Granted Jan 30, 2001·55 cites·15 claims
- 1684US7674691B2Method of manufacturing an electrical antifuseIBM·Filed 2007·Granted Mar 9, 2010·10 cites·6 claims
- 1783US7880266B2Four-terminal antifuse structure having integrated heating elements for a programmable circuitIBM·Filed 2007·Granted Feb 1, 2011·8 cites·32 claims
- 1883US7227207B2Dense semiconductor fuse arrayIBM·Filed 2005·Granted Jun 5, 2007·11 cites·9 claims
- 1981US7732893B2Electrical fuse structure for higher post-programming resistanceIBM·Filed 2007·Granted Jun 8, 2010·10 cites·20 claims
- 2077US7745855B2Single crystal fuse on air in bulk siliconIBM·Filed 2007·Granted Jun 29, 2010·7 cites·8 claims
- 2177US7345904B1Method for programming an electronically programmable semiconductor fuseIBM·Filed 2006·Granted Mar 18, 2008·7 cites·9 claims
- 2277US6509611B1Method for wrapped-gate MOSFETIBM·Filed 2001·Granted Jan 21, 2003·20 cites·20 claims
- 2375US6177696B1Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devicesIBM·Filed 1998·Granted Jan 23, 2001·44 cites·33 claims
- 2472US7713792B2Fuse structure including monocrystalline semiconductor material layer and gapIBM·Filed 2007·Granted May 11, 2010·5 cites·11 claims
- 2565US6403412B1Method for in-situ formation of bottle shaped trench by gas phase etchingIBM·Filed 1999·Granted Jun 11, 2002·28 cites·16 claims
- 2664US7081387B2Damascene gate multi-mesa MOSFETIBM·Filed 2004·Granted Jul 25, 2006·9 cites·13 claims
- 2763US6884672B1Method for forming an electronic deviceIBM·Filed 2003·Granted Apr 26, 2005·11 cites·20 claims
- 2862US7323761B2Antifuse structure having an integrated heating elementIBM·Filed 2004·Granted Jan 29, 2008·9 cites·12 claims
- 2961US6780735B2Method to increase carbon and boron doping concentrations in Si and SiGe filmsIBM·Filed 2001·Granted Aug 24, 2004·7 cites·9 claims
- 3060US2024242486A1Electronic device for providing image for training of artificial intelligence model and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3159US8115275B2Electrical antifuseCESTERO ALBERTO·Filed 2009·Granted Feb 14, 2012·2 cites·8 claims
- 3259US6429149B1Low temperature LPCVD PSG/BPSG processIBM·Filed 2000·Granted Aug 6, 2002·6 cites·18 claims
- 3355US9431233B2Plasma lighting system with a metallic material in the bulbLG ELECTRONICS INC·Filed 2014·Granted Aug 30, 2016·0 cites·14 claims
- 3454US9218951B2Plasma lighting system with light sensor for control based on intensityLG ELECTRONICS INC·Filed 2014·Granted Dec 22, 2015·0 cites·20 claims
- 3553US2008285335A1Programmable fuse/non-volatile memory structures using externally heated phase change materialIBM·Filed 2008·Application pending·0 cites
- 3652US6818952B2Damascene gate multi-mesa MOSFETIBM·Filed 2002·Granted Nov 16, 2004·4 cites·6 claims
- 3746US9184129B2Three-terminal antifuse structure having integrated heating elements for a programmable circuitPARK BYEONGJU·Filed 2011·Granted Nov 10, 2015·0 cites·20 claims
- 3845US6198167B1Semiconductor structure exhibiting reduced contact resistance and method for fabricationIBM·Filed 1999·Granted Mar 6, 2001·11 cites·12 claims
- 3944US2008051008A1Apparatus and method for chemical mechanical polishing with improved uniformityIBM·Filed 2006·Application pending·0 cites
- 4044US2008157270A1Metal to Metal Low-K AntifuseKIM DEOK-KEE·Filed 2006·Application pending·0 cites
- 4144US2008157268A1Fuse Element Using Low-K DielectricKIM DEOK-KEE·Filed 2006·Application pending·0 cites
- 4243US2007284693A1Electrically programmable fuse with asymmetric structureIBM·Filed 2006·Application pending·0 cites
- 4343US2009108400A1Anti-fuse structure including a sense pad contact region and methods for fabrication and programming thereofIBM·Filed 2007·Application pending·0 cites
- 4436US2008218247A1Method for automatically adjusting electrical fuse programming voltageIBM·Filed 2007·Application pending·0 cites
- 4533US2002106857A1Method for surface area enhancement of capacitors by film growth and self maskingIBM·Filed 2001·Application pending·0 cites
- 4633US2009135640A1Electromigration-programmable semiconductor device with bidirectional resistance changeIBM·Filed 2007·Application pending·0 cites
- 4731US2001042880A1Dram cell with active area reclaimFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →