Inventor · disambiguated record
Hung-Cheng Sung
Also filed as: SUNG HUNG-CHENG
100 granted patents·6 pending applications·2,367 citations·filing 1994–2015
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG102CHIH YUE-DER1SUNG HUNG-CHENG1TAIWAN SEMICONDUCTOR MANUFACTR1TAIWAN SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
106 records- 0196US5441907AProcess for manufacturing a plug-diode mask ROMTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Aug 15, 1995·162 cites·10 claims
- 0294US5595927AMethod for making self-aligned source/drain mask ROM memory cell using trench etched channelTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jan 21, 1997·157 cites·31 claims
- 0393US6159801AMethod to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·84 cites·33 claims
- 0492US5631179AMethod of manufacturing metallic source line, self-aligned contact for flash memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted May 20, 1997·86 cites·21 claims
- 0591US7326994B2Logic compatible non-volatile memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 5, 2008·17 cites·19 claims
- 0691US6380583B1Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·46 cites·6 claims
- 0791US6312989B1Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 6, 2001·43 cites·20 claims
- 0890US6228695B1Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·76 cites·25 claims
- 0990US6204126B1Method to fabricate a new structure with multi-self-aligned for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 20, 2001·56 cites·20 claims
- 1089US6117733APoly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·85 cites·32 claims
- 1189US5962903APlanarized plug-diode mask ROM structureTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 5, 1999·72 cites·12 claims
- 1286US7667261B2Split-gate memory cells and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·9 cites·18 claims
- 1385US6649489B1Poly etching solution to improve silicon trench for low STI profileTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Nov 18, 2003·39 cites·32 claims
- 1485US5589413AMethod of manufacturing self-aligned bit-line during EPROM fabricationTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Dec 31, 1996·49 cites·20 claims
- 1583US6828183B1Process for high voltage oxide and select gate poly for split-gate flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 7, 2004·27 cites·38 claims
- 1683US6417049B1Split gate flash cell for multiple storageTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·28 cites·5 claims
- 1783US6214662B1Forming self-align source line for memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 10, 2001·27 cites·48 claims
- 1883US5734607AMethod of manufacturing self-aligned bit-line and device manufactured therbyTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 31, 1998·43 cites·17 claims
- 1982US6358796B1Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·46 cites·24 claims
- 2082US6284596B1Method of forming split-gate flash cell for salicide and self-align contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 4, 2001·39 cites·33 claims
- 2181US7557402B2High write and erase efficiency embedded flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jul 7, 2009·8 cites·15 claims
- 2281US6441429B1Split-gate flash memory device having floating gate electrode with sharp peakTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 27, 2002·24 cites·10 claims
- 2380US6017795AMethod of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 25, 2000·37 cites·29 claims
- 2479US6538277B2Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 25, 2003·23 cites·5 claims
- 2579US6229176B1Split gate flash with step poly to improve program speedTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·37 cites·8 claims
- 2679US5858840AMethod of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 12, 1999·37 cites·12 claims
- 2778US8610220B2Semiconductor device with self-aligned interconnectsCHIH YUE-DER·Filed 2012·Granted Dec 17, 2013·4 cites·19 claims
- 2878US6559501B2Method for forming split-gate flash cell for salicide and self-align contactTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 6, 2003·16 cites·7 claims
- 2978US6127229AProcess of forming an EEPROM device having a split gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·36 cites·10 claims
- 3078US5879992AMethod of fabricating step poly to improve program speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 9, 1999·38 cites·22 claims
- 3177US5814862AMetallic source line and drain plug with self-aligned contacts for flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 29, 1998·33 cites·18 claims
- 3276US6380035B1Poly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·19 cites·32 claims
- 3376US6259131B1Poly tip and self aligned source for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 10, 2001·37 cites·9 claims
- 3475US7417278B2Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 26, 2008·4 cites·16 claims
- 3575US6753569B2Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·18 cites·9 claims
- 3675US6569736B1Method for fabricating square polysilicon spacers for a split gate flash memory device by multi-step polysilicon etchTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 27, 2003·22 cites·16 claims
- 3775US6482700B2Split gate field effect transistor (FET) device with enhanced electrode registration and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 19, 2002·20 cites·8 claims
- 3875US6410957B1Method of forming poly tip to improve erasing and programming speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 25, 2002·13 cites·6 claims
- 3974US9171120B2Method of converting between non-volatile memory technologies and system for implementing the methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 27, 2015·2 cites·20 claims
- 4074US5970371AMethod of forming sharp beak of poly to improve erase speed in split-gate flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 19, 1999·31 cites·20 claims
- 4173US6674118B2PIP capacitor for split-gate flash processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jan 6, 2004·13 cites·6 claims
- 4273US6333228B1Method to improve the control of bird's beak profile of poly in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 25, 2001·19 cites·53 claims
- 4373US6165845AMethod to fabricate poly tip in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 26, 2000·29 cites·19 claims
- 4473US6130132AClean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peakTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 10, 2000·29 cites·20 claims
- 4572US6872667B1Method of fabricating semiconductor device with separate periphery and cell region etching stepsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 29, 2005·17 cites·23 claims
- 4672US6090668AMethod to fabricate sharp tip of poly in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 18, 2000·34 cites·16 claims
- 4772US6005809AProgram and erase method for a split gate flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 21, 1999·33 cites·44 claims
- 4871US7652318B2Split-gate memory cells and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 26, 2010·3 cites·15 claims
- 4971US6479859B2Split gate flash memory with multiple self-alignmentsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 12, 2002·15 cites·9 claims
- 5071US6355527B1Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 12, 2002·28 cites·21 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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