Inventor · disambiguated record
Jung-Ho Chang
Also filed as: CHANG JUNG-HO
16 granted patents·1 pending application·517 citations·filing 1998–2023
94Inventor score
Top patents by PatentIndex Score
17 records- 0188US6046083AGrowth enhancement of hemispherical grain silicon on a doped polysilicon storage node capacitor structure, for dynamic random access memory applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Apr 4, 2000·85 cites·11 claims
- 0287US6037238AProcess to reduce defect formation occurring during shallow trench isolation formationVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Mar 14, 2000·90 cites·17 claims
- 0383US5913119AMethod of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structureVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 15, 1999·57 cites·23 claims
- 0479US5897352AMethod of manufacturing hemispherical grained polysilicon with improved adhesion and reduced capacitance depletionVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Apr 27, 1999·40 cites·23 claims
- 0578US6037219AOne step in situ doped amorphous silicon layers used for selective hemispherical grain silicon formation for crown shaped capacitor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Mar 14, 2000·45 cites·27 claims
- 0675US5877052AResolution of hemispherical grained silicon peeling and row-disturb problems for dynamic random access memory, stacked capacitor structuresVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Mar 2, 1999·39 cites·27 claims
- 0774US6074931AProcess for recess-free planarization of shallow trench isolationVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 13, 2000·47 cites·23 claims
- 0872US5930625AMethod for fabricating a stacked, or crown shaped, capacitor structureVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jul 27, 1999·33 cites·19 claims
- 0969US6352896B1Method of manufacturing DRAM capacitorWINBOND ELECTRONICS CORP·Filed 2000·Granted Mar 5, 2002·13 cites·26 claims
- 1064US6194265B1Process for integrating hemispherical grain silicon and a nitride-oxide capacitor dielectric layer for a dynamic random access memory capacitor structureVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Feb 27, 2001·24 cites·24 claims
- 1160US6165830AMethod to decrease capacitance depletion, for a DRAM capacitor, via selective deposition of a doped polysilicon layer on a selectively formed hemispherical grain silicon layerVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 26, 2000·20 cites·18 claims
- 1256US6127221AIn situ, one step, formation of selective hemispherical grain silicon layer, and a nitride-oxide dielectric capacitor layer, for a DRAM applicationVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Oct 3, 2000·17 cites·19 claims
- 1353US2024387748A1Semiconductor structures and methods for forming the sameWINBOND ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1449US12254245B2Method of processing digitalized drawing data and computer programSAMSUNG E&A CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·16 claims
- 1549US11251273B2Non-volatile memory device and method for manufacturing the sameWINBOND ELECTRONICS CORP·Filed 2019·Granted Feb 15, 2022·0 cites·12 claims
- 1646US10971508B2Integrated circuit and method of manufacturing the sameWINBOND ELECTRONICS CORP·Filed 2019·Granted Apr 6, 2021·0 cites·16 claims
- 1739US6130146AIn-situ nitride and oxynitride deposition process in the same chamberVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Oct 10, 2000·7 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →