Inventor · disambiguated record
Li-Yeat Chen
Also filed as: CHEN LI · CHEN LI-YEAT
11 granted patents·3 pending applications·434 citations·filing 1997–2015
93Inventor score
Files withVANGUARD INT SEMICONDUCT CORP8UNITED MICROELECTRONICS CORP2CHEN CHUNG-YI1MAXCHIP ELECTRONICS CORP1TEXAS INSTRUMENTS INC1
Top patents by PatentIndex Score
14 records- 0191US6077742AMethod for making dynamic random access memory (DRAM) cells having zigzag-shaped stacked capacitors with increased capacitanceVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 20, 2000·113 cites·24 claims
- 0290US5956587AMethod for crown type capacitor in dynamic random access memoryVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Sep 21, 1999·76 cites·12 claims
- 0389US6008513ADynamic random access memory (DRAM) cells with minimum active cell areas using sidewall-space bit linesVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 28, 1999·64 cites·6 claims
- 0487US5858829AMethod for fabricating dynamic random access memory (DRAM) cells with minimum active cell areas using sidewall-spacer bit linesVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jan 12, 1999·55 cites·24 claims
- 0579US6251779B1Method of forming a self-aligned silicide on a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jun 26, 2001·28 cites·8 claims
- 0668US5837576AMethod for forming a capacitor using a silicon oxynitride etching stop layerVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 17, 1998·30 cites·8 claims
- 0766US6077743AMethod for making dynamic random access memory cells having brush-shaped stacked capacitors patterned from a hemispherical grain hard maskVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 20, 2000·27 cites·32 claims
- 0856US6720255B1Semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion and method of forming the deviceTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 13, 2004·7 cites·47 claims
- 0956US5923973AMethod of making greek letter psi shaped capacitor for DRAM circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jul 13, 1999·15 cites·20 claims
- 1047US2011140188A1Non-volatile memory device and method of fabricating the sameMAXCHIP ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 1143US2012264264A1Method of fabricating non-volatile memory deviceCHEN CHUNG-YI·Filed 2012·Application pending·0 cites
- 1241US6162713AMethod for fabricating semiconductor structures having metal silicidesUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 19, 2000·12 cites·26 claims
- 1337US6117740AMethod of forming a shallow trench isolation by using PE-oxide and PE-nitride multi-layerVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Sep 12, 2000·7 cites·12 claims
- 1434US2016145094A1Micro-elelctro-mechanical system device and method for fabricating the sameUPI SEMICONDUCTOR CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →