Inventor · disambiguated record
Edward A. Beam, Iii
Also filed as: BEAM EDWARD · BEAM III EDWARD · BEAM III EDWARD A
27 granted patents·3 pending applications·359 citations·filing 1990–2022
96Inventor score
Files withQORVO US INC12TRIQUINT SEMICONDUCTOR INC9TEXAS INSTRUMENTS INC7BEAM III EDWARD A1SAUNIER PAUL A1
Top patents by PatentIndex Score
30 records- 0197US9337278B1Gallium nitride on high thermal conductivity material device and methodTRIQUINT SEMICONDUCTOR INC·Filed 2015·Granted May 10, 2016·200 cites·23 claims
- 0289US9202905B1Digital alloy layer in a III-nitrade based heterojunction field effect transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted Dec 1, 2015·11 cites·20 claims
- 0387US8350295B1Device structure including high-thermal-conductivity substrateTRIQUINT SEMICONDUCTOR INC·Filed 2008·Granted Jan 8, 2013·14 cites·10 claims
- 0484US9972708B2Double heterojunction field effect transistor with polarization compensated layerQORVO US INC·Filed 2017·Granted May 15, 2018·4 cites·19 claims
- 0584US9865721B1High electron mobility transistor (HEMT) device and method of making the sameQORVO US INC·Filed 2016·Granted Jan 9, 2018·4 cites·20 claims
- 0682US10290713B2Field-effect transistorQORVO US INC·Filed 2018·Granted May 14, 2019·3 cites·24 claims
- 0780US10636881B2High electron mobility transistor (HEMT) deviceQORVO US INC·Filed 2016·Granted Apr 28, 2020·3 cites·4 claims
- 0880US6787826B1Heterostructure field effect transistorTRIQUINT SEMICONDUCTOR INC·Filed 2003·Granted Sep 7, 2004·27 cites·30 claims
- 0978US10734512B2High electron mobility transistor (HEMT) deviceQORVO US INC·Filed 2019·Granted Aug 4, 2020·2 cites·20 claims
- 1071US9640650B2Doped gallium nitride high-electron mobility transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted May 2, 2017·2 cites·12 claims
- 1170US5935641AMethod of forming a piezoelectric layer with improved textureTEXAS INSTRUMENTS INC·Filed 1997·Granted Aug 10, 1999·22 cites·19 claims
- 1265US10037899B2Semiconductor device with high thermal conductivity substrate and process for making the sameQORVO US INC·Filed 2016·Granted Jul 31, 2018·1 cites·18 claims
- 1361US9029914B2Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compoundTRIQUINT SEMICONDUCTOR INC·Filed 2012·Granted May 12, 2015·1 cites·11 claims
- 1461US8975664B2Group III-nitride transistor using a regrown structureSAUNIER PAUL A·Filed 2012·Granted Mar 10, 2015·2 cites·17 claims
- 1561US6697412B2Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafersTRIQUINT SEMICONDUCTOR INC·Filed 2001·Granted Feb 24, 2004·11 cites·25 claims
- 1660US2023135911A1MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTHQORVO US INC·Filed 2022·Application pending·0 cites
- 1757US12166118B2High electron mobility transistors (HEMTS) including a yttrium (Y) and aluminum nitride (AIN) (YAIN) alloy layerQORVO US INC·Filed 2022·Granted Dec 10, 2024·0 cites·11 claims
- 1855US5534714AIntegrated field effect transistor and resonant tunneling diodeTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 9, 1996·13 cites·8 claims
- 1953US5084409AMethod for patterned heteroepitaxial growthTEXAS INSTRUMENTS INC·Filed 1990·Granted Jan 28, 1992·24 cites·5 claims
- 2048US10559665B2Field-effect transistorQORVO US INC·Filed 2019·Granted Feb 11, 2020·0 cites·20 claims
- 2148US2023290834A1ENHANCEMENT-MODE GaN HFETQORVO US INC·Filed 2021·Application pending·0 cites
- 2247US10090172B2Semiconductor device with high thermal conductivity substrate and process for making the sameQORVO US INC·Filed 2016·Granted Oct 2, 2018·0 cites·12 claims
- 2346US10177247B2Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfacesQORVO US INC·Filed 2017·Granted Jan 8, 2019·0 cites·21 claims
- 2442US5416040AMethod of making an integrated field effect transistor and resonant tunneling diodeTEXAS INSTRUMENTS INC·Filed 1993·Granted May 16, 1995·7 cites·10 claims
- 2542US2013119404A1Device structure including high-thermal-conductivity substrateTRIQUINT SEMICONDUCTOR INC·Filed 2013·Application pending·0 cites
- 2638US8778747B2Regrown Schottky structures for GAN HEMT devicesBEAM III EDWARD A·Filed 2011·Granted Jul 15, 2014·0 cites·18 claims
- 2737US7148463B2Increased responsivity photodetectorTRIQUINT SEMICONDUCTOR INC·Filed 2003·Granted Dec 12, 2006·1 cites·30 claims
- 2833US5893390AFlow controllerTEXAS INSTRUMENTS INC·Filed 1997·Granted Apr 13, 1999·5 cites·20 claims
- 2931US5952059AForming a piezoelectric layer with improved textureTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 14, 1999·1 cites·9 claims
- 3030US5342804AMethod of fabrication of devices with different operating characteristics through a single selective epitaxial growth processTEXAS INSTRUMENTS INC·Filed 1993·Granted Aug 30, 1994·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →