Inventor · disambiguated record
Yasushi Fujioka
Also filed as: FUJIOKA YASUSHI
59 granted patents·11 pending applications·2,089 citations·filing 1987–2017
99Inventor score
Top patents by PatentIndex Score
70 records- 0198US5093704ASemiconductor device having a semiconductor region in which a band gap being continuously gradedCANON KK·Filed 1989·Granted Mar 3, 1992·297 cites·2 claims
- 0295US6822157B2Thin film solar battery moduleSHARP KK·Filed 2002·Granted Nov 23, 2004·83 cites·13 claims
- 0393US5720826APhotovoltaic element and fabrication process thereofCANON KK·Filed 1996·Granted Feb 24, 1998·132 cites·42 claims
- 0492US5244509ASubstrate having an uneven surface for solar cell and a solar cell provided with said substrateCANON KK·Filed 1991·Granted Sep 14, 1993·116 cites·16 claims
- 0591US5589007APhotovoltaic elements and process and apparatus for their formationCANON KK·Filed 1995·Granted Dec 31, 1996·112 cites·21 claims
- 0689US6525264B2Thin-film solar cell moduleSHARP KK·Filed 2001·Granted Feb 25, 2003·59 cites·38 claims
- 0789US5520740AProcess for continuously forming a large area functional deposited film by microwave PCVD method and apparatus suitable for practicing the sameCANON KK·Filed 1995·Granted May 28, 1996·89 cites·12 claims
- 0887US5714010AProcess for continuously forming a large area functional deposited film by a microwave PCVD method and an apparatus suitable for practicing the sameCANON KK·Filed 1995·Granted Feb 3, 1998·80 cites·3 claims
- 0987US5266116AGlow discharge apparatus for continuously manufacturing semiconductor device comprising gas gates with slotted rollersCANON KK·Filed 1992·Granted Nov 30, 1993·59 cites·2 claims
- 1086US5527391AMethod and apparatus for continuously forming functional deposited films with a large area by a microwave plasma CVD methodCANON KK·Filed 1995·Granted Jun 18, 1996·72 cites·22 claims
- 1186US4788120ALight receiving member for use in electrophotography having an amorphous silicon layerCANON KK·Filed 1988·Granted Nov 29, 1988·27 cites·28 claims
- 1285US5468521AMethod for forming a photoelectric deposited filmCANON KK·Filed 1994·Granted Nov 21, 1995·61 cites·26 claims
- 1385US5114770AMethod for continuously forming functional deposited films with a large area by a microwave plasma cvd methodCANON KK·Filed 1990·Granted May 19, 1992·61 cites·25 claims
- 1481US7565880B2Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the sameSHARP KK·Filed 2007·Granted Jul 28, 2009·4 cites·6 claims
- 1580US4888062APin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %CANON KK·Filed 1988·Granted Dec 19, 1989·37 cites·8 claims
- 1679US4959106APhotovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %CANON KK·Filed 1989·Granted Sep 25, 1990·49 cites·9 claims
- 1778US5968274AContinuous forming method for functional deposited films and deposition apparatusCANON KK·Filed 1996·Granted Oct 19, 1999·46 cites·15 claims
- 1877US5130170AMicrowave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagationCANON KK·Filed 1990·Granted Jul 14, 1992·41 cites·22 claims
- 1976US7750233B2Thin film solar cell and manufacturing method thereofSHARP KK·Filed 2006·Granted Jul 6, 2010·4 cites·5 claims
- 2076US7195673B2Plasma CVD apparatus, and method for forming film and method for forming semiconductor device using the sameSHARP KK·Filed 2003·Granted Mar 27, 2007·11 cites·13 claims
- 2176US7032536B2Thin film formation apparatus including engagement members for support during thermal expansionSHARP KK·Filed 2003·Granted Apr 25, 2006·12 cites·12 claims
- 2274US6223684B1Film deposition apparatusCANON KK·Filed 1998·Granted May 1, 2001·43 cites·6 claims
- 2374US4926229APin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) materialCANON KK·Filed 1988·Granted May 15, 1990·28 cites·10 claims
- 2473US6495392B2Process for producing a semiconductor deviceCANON KK·Filed 2001·Granted Dec 17, 2002·17 cites·11 claims
- 2573US5919310AContinuously film-forming apparatus provided with improved gas gate meansCANON KK·Filed 1996·Granted Jul 6, 1999·37 cites·11 claims
- 2672US5769963APhotovoltaic deviceCANON KK·Filed 1996·Granted Jun 23, 1998·39 cites·38 claims
- 2772US5575855AApparatus for forming a deposited filmCANON KK·Filed 1995·Granted Nov 19, 1996·36 cites·21 claims
- 2871US6159763AMethod and device for forming semiconductor thin film, and method and device for forming photovoltaic elementCANON KK·Filed 1997·Granted Dec 12, 2000·39 cites·4 claims
- 2971US5510151AContinuous film-forming process using microwave energy in a moving substrate web functioning as a substrate and plasma generating spaceCANON KK·Filed 1992·Granted Apr 23, 1996·42 cites·21 claims
- 3070US6287943B1Deposition of semiconductor layer by plasma processCANON KK·Filed 1999·Granted Sep 11, 2001·28 cites·24 claims
- 3169US6313430B1Plasma processing apparatus and plasma processing methodCANON KK·Filed 1999·Granted Nov 6, 2001·26 cites·27 claims
- 3269US4851302AFunctional ZnSe:H deposited filmsCANON KK·Filed 1988·Granted Jul 25, 1989·32 cites·3 claims
- 3368US6368944B1Method of manufacturing photovoltaic element and apparatus thereforCANON KK·Filed 2000·Granted Apr 9, 2002·6 cites·6 claims
- 3467US6271055B1Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layersCANON KK·Filed 1998·Granted Aug 7, 2001·28 cites·38 claims
- 3567US5008726APIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic %CANON KK·Filed 1988·Granted Apr 16, 1991·21 cites·8 claims
- 3666US6306267B1Method of producing a photovoltaic device using a sputtering methodCANON KK·Filed 2000·Granted Oct 23, 2001·6 cites·3 claims
- 3765US6472296B2Fabrication of photovoltaic cell by plasma processCANON KK·Filed 2001·Granted Oct 29, 2002·7 cites·26 claims
- 3864US6436797B1Apparatus and method for forming a deposited film on a substrateCANON KK·Filed 2000·Granted Aug 20, 2002·7 cites·12 claims
- 3963US5028488AFunctional ZnSe1-x Tex :H deposited filmCANON KK·Filed 1988·Granted Jul 2, 1991·27 cites·4 claims
- 4061US6162988APhotovoltaic elementCANON KK·Filed 1997·Granted Dec 19, 2000·18 cites·7 claims
- 4159US5284525ASolar cellCANON KK·Filed 1991·Granted Feb 8, 1994·21 cites·6 claims
- 4259US2009084500A1Processing apparatus, exhaust processing process and plasma processing processCANON KK·Filed 2008·Application pending·0 cites
- 4359US2009114155A1Processing apparatus, exhaust processing process and plasma processing processCANON KK·Filed 2008·Application pending·0 cites
- 4459US2009095420A1Processing apparatus, exhaust processing process and plasma processing processCANON KK·Filed 2008·Application pending·0 cites
- 4559US2009145555A1Processing apparatus, exhaust processing process and plasma processing processCANON KK·Filed 2008·Application pending·0 cites
- 4658US5291484ARelay and exchange system for time division multiplex dataFUJITSU LTD·Filed 1990·Granted Mar 1, 1994·28 cites·23 claims
- 4758US4845001ALight receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitrideCANON KK·Filed 1987·Granted Jul 4, 1989·10 cites·27 claims
- 4856US2008014345A1Processing apparatus, exhaust processing process and plasma processing processCANON KK·Filed 2007·Application pending·0 cites
- 4955US5573601APin amorphous silicon photovoltaic element with counter-doped intermediate layerCANON KK·Filed 1994·Granted Nov 12, 1996·17 cites·17 claims
- 5051US4786574ALayered amorphous silicon containing photoconductive element having surface layer with specified optical band gapCANON KK·Filed 1987·Granted Nov 22, 1988·13 cites·47 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →