Inventor · disambiguated record
Sun-Ae Seo
Also filed as: SEO SUN AE
85 granted patents·11 pending applications·549 citations·filing 2003–2014
99Inventor score
Top patents by PatentIndex Score
96 records- 0195US8411498B2Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the sameKIM KWANG-SEOK·Filed 2010·Granted Apr 2, 2013·53 cites·24 claims
- 0293US8101980B2Graphene device and method of manufacturing the sameHEO JIN-SEONG·Filed 2010·Granted Jan 24, 2012·16 cites·29 claims
- 0393US7602042B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·26 cites·21 claims
- 0493US7345898B2Complementary nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·22 cites·25 claims
- 0591US8427246B2Oscillators and methods of manufacturing and operating the sameLEE SUNG-CHUL·Filed 2011·Granted Apr 23, 2013·9 cites·24 claims
- 0690US7521704B2Memory device using multi-layer with a graded resistance changeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·20 cites·13 claims
- 0790US7361554B2Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 22, 2008·15 cites·6 claims
- 0889US8159037B2Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structureWOO YUN-SUNG·Filed 2008·Granted Apr 17, 2012·15 cites·17 claims
- 0988US8274098B2Field effect transistor, logic circuit including the same and methods of manufacturing the sameCHUNG HYUN-JONG·Filed 2007·Granted Sep 25, 2012·16 cites·19 claims
- 1087US8513653B2Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the sameWOO YUN-SUNG·Filed 2010·Granted Aug 20, 2013·10 cites·23 claims
- 1187US7998804B2Nonvolatile memory device including nano dot and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 16, 2011·9 cites·9 claims
- 1287US7961005B1Non-volatile logic circuits, integrated circuits including the non-volatile logic circuits, and methods of operating the integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jun 14, 2011·8 cites·20 claims
- 1387US7400027B2Nonvolatile memory device having two or more resistance elements and methods of forming and using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·18 cites·7 claims
- 1486US7935953B2Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 3, 2011·11 cites·16 claims
- 1585US9359211B2Methods of fabricating graphene using alloy catalystWOO YUN-SUNG·Filed 2010·Granted Jun 7, 2016·3 cites·8 claims
- 1685US8421545B2Oscillators and methods of operating the sameKIM KWANG-SEOK·Filed 2011·Granted Apr 16, 2013·6 cites·22 claims
- 1784US8466461B2Resistive random access memory and method of manufacturing the sameSEO SUN-AE·Filed 2007·Granted Jun 18, 2013·12 cites·11 claims
- 1884US7910232B2Information storage devices using magnetic domain wall movement and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 22, 2011·5 cites·13 claims
- 1983US7635628B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 22, 2009·9 cites·10 claims
- 2083US7256447B2Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 14, 2007·9 cites·37 claims
- 2182US8664439B2Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the sameLEE SUNG-HOON·Filed 2011·Granted Mar 4, 2014·5 cites·18 claims
- 2282US8575665B2Graphene electronic device and method of fabricating the sameHEO JIN-SEONG·Filed 2011·Granted Nov 5, 2013·9 cites·9 claims
- 2382US8487356B2Graphene device and method of manufacturing the sameHEO JIN SEONG·Filed 2011·Granted Jul 16, 2013·5 cites·29 claims
- 2482US8084371B2Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistorSEO DAVID·Filed 2010·Granted Dec 27, 2011·5 cites·19 claims
- 2581US8754717B2Oscillators and methods of operating the sameLEE SUNG-CHUL·Filed 2011·Granted Jun 17, 2014·5 cites·18 claims
- 2681US7767502B2Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·8 cites·17 claims
- 2780US6913984B2Method of manufacturing memory with nano dotsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·28 cites·8 claims
- 2878US8884345B2Graphene electronic device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 11, 2014·6 cites·7 claims
- 2978US8785912B2Graphene electronic device including a plurality of graphene channel layersCHUNG HYUN-JONG·Filed 2011·Granted Jul 22, 2014·5 cites·12 claims
- 3078US8728880B2Graphene electronic device and method of fabricating the sameCHUNG HYUN-JONG·Filed 2011·Granted May 20, 2014·4 cites·7 claims
- 3178US8614014B2Tracks including magnetic layer and magnetic memory devices comprising the sameLEE SUNG-CHUL·Filed 2010·Granted Dec 24, 2013·4 cites·25 claims
- 3278US8592799B2Graphene electronic device and method of fabricating the sameYANG HEE-JUN·Filed 2011·Granted Nov 26, 2013·4 cites·6 claims
- 3378US8574730B2Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the sameCHO YOUNG-JIN·Filed 2008·Granted Nov 5, 2013·3 cites·22 claims
- 3478US8045371B2Magnetic storage device having a buffer track and storage tracks, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·3 cites·31 claims
- 3578US7924593B2Information storage devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·10 cites·25 claims
- 3678US7791923B2Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory elementSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·17 claims
- 3777US8421131B2Graphene electronic device and method of fabricating the sameCHUNG HYUN-JONG·Filed 2011·Granted Apr 16, 2013·4 cites·10 claims
- 3877US8310014B2Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistorSEO DAVID·Filed 2011·Granted Nov 13, 2012·3 cites·3 claims
- 3976US8350247B2Resistive random access memory having a solid solution layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 8, 2013·6 cites·11 claims
- 4076US8218362B2Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the sameHWANG IN-JUN·Filed 2009·Granted Jul 10, 2012·4 cites·26 claims
- 4176US7663136B2Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·2 cites·6 claims
- 4275US8994079B2Graphene electronic devices having multi-layered gate insulating layerSONG HYUN-JAE·Filed 2012·Granted Mar 31, 2015·5 cites·17 claims
- 4374US8847692B2Oscillators and method of operating the samePI UNG-HWAN·Filed 2011·Granted Sep 30, 2014·3 cites·16 claims
- 4474US8144504B2Method of operating magnetic random access memory deviceKIM KWANG-SEOK·Filed 2009·Granted Mar 27, 2012·6 cites·9 claims
- 4574US8139387B2Method of erasing a memory device including complementary nonvolatile memory devicesPARK YOON-DONG·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 4673US7936044B2Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 3, 2011·4 cites·26 claims
- 4772US8101983B2Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the sameSEO SUN-AE·Filed 2007·Granted Jan 24, 2012·7 cites·8 claims
- 4872US7710757B2Magnetic track using magnetic domain wall movement and information storage device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·10 cites·22 claims
- 4971US8835899B2Graphene electronic device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 16, 2014·2 cites·4 claims
- 5070US9108848B2Methods of manufacturing and transferring larger-sized grapheneWOO YUN-SUNG·Filed 2010·Granted Aug 18, 2015·2 cites·16 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →