Inventor · disambiguated record
Chin-An Chang
Also filed as: CHANG CHIN A · CHANG CHIN CHI · CHANG CHIN-AN
13 granted patents·4 pending applications·267 citations·filing 1978–2017
93Inventor score
Top patents by PatentIndex Score
17 records- 0182US4538165AFET With heterojunction induced channelIBM·Filed 1984·Granted Aug 27, 1985·34 cites·4 claims
- 0279US4558336AMBE Growth technique for matching superlattices grown on GaAs substratesUS ARMY·Filed 1984·Granted Dec 10, 1985·44 cites·4 claims
- 0373US5112699AMetal-metal epitaxy on substrates and method of makingIBM·Filed 1990·Granted May 12, 1992·24 cites·59 claims
- 0471US5048744APalladium enhanced fluxless soldering and bonding of semiconductor device contactsIBM·Filed 1990·Granted Sep 17, 1991·47 cites·19 claims
- 0564US4395722AHeterojunction transistorUS ARMY·Filed 1980·Granted Jul 26, 1983·18 cites·11 claims
- 0663US6060905AVariable voltage, variable impedance CMOS off-chip driver and receiver interface and circuitsIBM·Filed 1996·Granted May 9, 2000·18 cites·14 claims
- 0761US4517047AMBE growth technique for matching superlattices grown on GaAs substratesUS ARMY·Filed 1981·Granted May 14, 1985·23 cites·14 claims
- 0860US2011140484A1Multi-Function ChairCHANG CHIN AN·Filed 2009·Application pending·0 cites
- 0956US4371884AInAs-GaSb Tunnel diodeUS ARMY·Filed 1981·Granted Feb 1, 1983·13 cites·15 claims
- 1055US4743951AField effect transistorIBM·Filed 1982·Granted May 10, 1988·12 cites·2 claims
- 1153US4239584AMolecular-beam epitaxy system and method including hydrogen treatmentIBM·Filed 1978·Granted Dec 16, 1980·9 cites·2 claims
- 1243US5225711APalladium enhanced soldering and bonding of semiconductor device contactsIBM·Filed 1991·Granted Jul 6, 1993·13 cites·9 claims
- 1343US2004036905A1Multi-function printerFiled 2002·Application pending·0 cites
- 1438US2019054976A1Effort-saving bicycleCHANG CHIN AN·Filed 2017·Application pending·0 cites
- 1535US5635858AZero-stopping incrementersIBM·Filed 1995·Granted Jun 3, 1997·7 cites·5 claims
- 1633US4282043AProcess for reducing the interdiffusion of conductors and/or semiconductors in contact with each otherIBM·Filed 1980·Granted Aug 4, 1981·5 cites·20 claims
- 1732US2007045607A1Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereofCHEN NAI-CHUAN·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →