Inventor · disambiguated record
Hideaki Arima
Also filed as: ARIMA HIDEAKI
59 granted patents·2 pending applications·1,672 citations·filing 1982–2013
99Inventor score
Files withMITSUBISHI ELECTRIC CORP46RENESAS TECH CORP8NEC ELECTRONICS CORP2RENESAS ELECTRONICS CORP2SENOU SHUUICHI1
Top patents by PatentIndex Score
61 records- 0194US5763921ASemiconductor device including retrograde well structure with suppressed substrate bias effectsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 9, 1998·136 cites·2 claims
- 0293US5051948AContent addressable memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 24, 1991·81 cites·21 claims
- 0393US5049516AMethod of manufacturing semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 17, 1991·69 cites·12 claims
- 0492US5049975AMulti-layered interconnection structure for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 17, 1991·152 cites·5 claims
- 0591US7439132B2Semiconductor device comprising capacitor and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Oct 21, 2008·12 cites·3 claims
- 0691US4465529AMethod of producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1982·Granted Aug 14, 1984·81 cites·9 claims
- 0790US7368776B2Semiconductor device comprising a highly-reliable, constant capacitance capacitorRENESAS TECH CORP·Filed 2006·Granted May 6, 2008·10 cites·8 claims
- 0890US6194758B1Semiconductor device comprising capacitor and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 27, 2001·49 cites·12 claims
- 0990US5101250AElectrically programmable non-volatile memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 31, 1992·99 cites·13 claims
- 1088US8759891B2Semiconductor device comprising capacitor and method of fabricating the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Jun 24, 2014·5 cites·10 claims
- 1184US5486712ADRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 23, 1996·36 cites·15 claims
- 1284US5378643AElectrically programmable non-volatile semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 3, 1995·50 cites·1 claims
- 1381US5194925AElectrically programmable non-volatie semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 16, 1993·45 cites·12 claims
- 1480US7816204B2Semiconductor device comprising capacitor and method of fabricating the sameRENESAS TECH CORP·Filed 2008·Granted Oct 19, 2010·4 cites·2 claims
- 1580US5480826AMethod of manufacturing semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 2, 1996·40 cites·6 claims
- 1679US5672533AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 30, 1997·37 cites·1 claims
- 1779US5612241AMethod of manufacturing a DRAM having peripheral circuitry in which source drain interconnection contact of a MOS transistor is made small by utilizing a pad layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 18, 1997·29 cites·1 claims
- 1879US5523596ASemiconductor device having capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 4, 1996·53 cites·4 claims
- 1979US5218219ASemiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 8, 1993·35 cites·8 claims
- 2078US7045420B2Semiconductor device comprising capacitor and method of fabricating the sameRENESAS TECH CORP·Filed 2004·Granted May 16, 2006·12 cites·3 claims
- 2177US8471321B2Semiconductor device comprising capacitor and method of fabricating the sameTANAKA YOSHINORI·Filed 2010·Granted Jun 25, 2013·2 cites·7 claims
- 2277US6066881AIntegrated circuit having a memory cell transistor with a gate oxide layer which is thicker than the gate oxide layer of a peripheral circuit transistorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 23, 2000·27 cites·9 claims
- 2376US6940116B2Semiconductor device comprising a highly-reliable, constant capacitance capacitorRENESAS TECH CORP·Filed 2001·Granted Sep 6, 2005·12 cites·5 claims
- 2476US5381365ADynamic random access memory having stacked type capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 10, 1995·33 cites·5 claims
- 2575US5162262AMulti-layered interconnection structure for a semiconductor device and manufactured method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 10, 1992·57 cites·4 claims
- 2674US5597755AMethod of manufacturing a stacked capacitor in a dramMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 28, 1997·25 cites·9 claims
- 2773US5428239ASemiconductor device having retrograde well and diffusion-type wellMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jun 27, 1995·48 cites·8 claims
- 2873US4907198ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 6, 1990·24 cites·9 claims
- 2972US7795648B2Semiconductor device comprising capacitor and method of fabricating the sameRENESAS TECH CORP·Filed 2009·Granted Sep 14, 2010·2 cites·22 claims
- 3072US7754562B2Semiconductor device comprising capacitor and method of fabricating the sameRENESAS TECH CORP·Filed 2009·Granted Jul 13, 2010·2 cites·13 claims
- 3172US5364811AMethod of manufacturing a semiconductor memory device with multiple device forming regionsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 15, 1994·26 cites·3 claims
- 3272US5229314AMethod of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 20, 1993·33 cites·2 claims
- 3372US5141891AMIS-type semiconductor device of LDD structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 25, 1992·33 cites·10 claims
- 3470US4988635AMethod of manufacturing non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 29, 1991·26 cites·7 claims
- 3569US5798289AMethod of manufacturing stacked capacitors in a DRAM with reduced isolation region between adjacent capacitorsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 25, 1998·20 cites·1 claims
- 3668US4866493ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 12, 1989·25 cites·3 claims
- 3767US5489791AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 6, 1996·22 cites·3 claims
- 3866US5404042ASemiconductor memory device having a plurality of well regions of different conductivitiesMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 4, 1995·26 cites·4 claims
- 3966US4989054ANon-volatile semiconductor memory device using contact hole connectionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 29, 1991·19 cites·11 claims
- 4065US5434439ADynamic random access memory having stacked type capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 18, 1995·18 cites·11 claims
- 4161US5276344AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 1994·17 cites·27 claims
- 4261US5231041AManufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gateMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 27, 1993·22 cites·4 claims
- 4353US9202541B2Semiconductor apparatus configured to reduce data processing performanceSENOU SHUUICHI·Filed 2012·Granted Dec 1, 2015·1 cites·18 claims
- 4453US4746377ASemiconductor device with thermally oxidized insulating and arsenic diffusion layersMITSUBISHI ELECTRIC CORP·Filed 1986·Granted May 24, 1988·18 cites·3 claims
- 4552US5659191ADRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·8 cites·4 claims
- 4651US5408114ASemiconductor memory device having cylindrical capacitor and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 18, 1995·12 cites·1 claims
- 4751US5100818ANon-volatile semiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 31, 1992·12 cites·4 claims
- 4850US5315140ASemiconductor device having a polysilicon capacitor with large grain diameterMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 24, 1994·11 cites·9 claims
- 4947US5949110ADRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 7, 1999·6 cites·2 claims
- 5045US7782700B2Semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2009·Granted Aug 24, 2010·1 cites·13 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →