Inventor · disambiguated record
Soo-Jin Hong
Also filed as: HONG SOO-JIN
30 granted patents·5 pending applications·500 citations·filing 1996–2025
97Inventor score
Top patents by PatentIndex Score
35 records- 0197US12068337B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 20, 2024·2 cites·20 claims
- 0296US11652113B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
- 0396US11239269B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 1, 2022·7 cites·18 claims
- 0494US6566229B2Method of forming an insulating layer in a trench isolation type semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 20, 2003·102 cites·14 claims
- 0593US2025374691A1Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0690US6756654B2Structure of trench isolation and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 29, 2004·57 cites·13 claims
- 0789US12408453B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 0889US6683354B2Semiconductor device having trench isolation layer and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 27, 2004·51 cites·22 claims
- 0987US6699799B2Method of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 2, 2004·36 cites·15 claims
- 1083US7160787B2Structure of trench isolation and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 9, 2007·31 cites·22 claims
- 1181US11257857B2Image sensors including photoelectric conversion devices, trench, supporter, and isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·19 claims
- 1279US6251746B1Methods of forming trench isolation regions having stress-reducing nitride layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 26, 2001·66 cites·26 claims
- 1378US7807543B2Methods of manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID)SAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·8 cites·16 claims
- 1477US6593207B2Method of forming a trench device isolation structure with upper liner patternSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 15, 2003·25 cites·23 claims
- 1571US6121110ATrench isolation method for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 19, 2000·40 cites·28 claims
- 1670US9484203B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 1, 2016·2 cites·20 claims
- 1770US7871897B2Method of forming shallow trench isolation regions in devices with NMOS and PMOS regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·5 cites·20 claims
- 1870US6740955B1Trench device isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 25, 2004·16 cites·11 claims
- 1969US7785985B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·4 cites·19 claims
- 2068US7514744B2Semiconductor device including carrier accumulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 7, 2009·4 cites·17 claims
- 2164US8692372B2Semiconductor device having impurity doped polycrystalline layer including impurity diffusion prevention layer and dynamic random memory device including the semiconductor deviceLEE DONG-KAK·Filed 2010·Granted Apr 8, 2014·2 cites·6 claims
- 2262US7351661B2Semiconductor device having trench isolation layer and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 1, 2008·9 cites·9 claims
- 2361US8183136B2Method of forming insulating layer and method of manufacturing transistor using the sameJEONG SEONG-HOON·Filed 2010·Granted May 22, 2012·1 cites·10 claims
- 2459US9230922B2Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 5, 2016·0 cites·17 claims
- 2559US6583025B2Method of forming a trench isolation structure comprising annealing the oxidation barrier layer thereof in a furnaceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 24, 2003·8 cites·19 claims
- 2655US11462577B2Image device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 2748US5677232AMethods of fabricating combined field oxide/trench isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 14, 1997·15 cites·14 claims
- 2848US2010055856A1Method of forming oxide layer, and method of manufacturing semiconductor deviceHONG SOO-JIN·Filed 2009·Application pending·0 cites
- 2947US2009068823A1Plasma Ion Doping Method and ApparatusSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3044US8877634B2Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine patternSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Nov 4, 2014·0 cites·10 claims
- 3143US9449973B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 20, 2016·0 cites·20 claims
- 3240US2006138478A1Semiconductor device and method of forming sameSAMSUNG ELECTRONIS CO LTD·Filed 2005·Application pending·0 cites
- 3337US6624041B2Method for forming trench type isolation film using annealingSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Sep 23, 2003·6 cites·10 claims
- 3436US2018158828A1Semiconductor device including multi-liner layer in trenchSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 3531US8319260B2Semiconductor devices having polysilicon gate layer patterns and methods of manufacturing the sameLEE DEOK-HYUNG·Filed 2010·Granted Nov 27, 2012·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →