Inventor · disambiguated record
Volker Weinrich
Also filed as: WEINRICH VOLKER
28 granted patents·2 pending applications·276 citations·filing 1998–2003
96Inventor score
Top patents by PatentIndex Score
30 records- 0188US6708405B2Method for producing an electrically conducting connectionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 23, 2004·56 cites·23 claims
- 0276US6586348B2Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallizeINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 1, 2003·18 cites·3 claims
- 0370US6503792B2Method for fabricating a patterned metal-oxide-containing layerINFINCON TECHNOLOGIES AG·Filed 2000·Granted Jan 7, 2003·17 cites·14 claims
- 0469US6258658B1Memory cell configuration and corresponding fabrication methodINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jul 10, 2001·26 cites·16 claims
- 0563US6649424B2Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectricINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 18, 2003·10 cites·17 claims
- 0661US6737692B2Method for fabricating a component, and component having a metal layer and an insulation layerINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 18, 2004·7 cites·5 claims
- 0756US6790676B2Method for producing a ferroelectric layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Sep 14, 2004·7 cites·17 claims
- 0856US6734459B2Semiconductor memory cellINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 11, 2004·7 cites·8 claims
- 0955US6730562B2Method of patterning ferroelectric layersINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 4, 2004·4 cites·36 claims
- 1055US6037256AMethod for producing a noble metal-containing structure on a substrate, and semiconductor component having such a noble metal-containing structureSIEMENS AG·Filed 1998·Granted Mar 14, 2000·15 cites·11 claims
- 1154US6454956B1Structuring methodINFINEON TECHNOLOGIES AG·Filed 1998·Granted Sep 24, 2002·18 cites·33 claims
- 1253US7045070B1Method of producing an electrode configuration and method of electrically contacting the electrode configurationINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 16, 2006·4 cites·16 claims
- 1353US6004856AManufacturing process for a raised capacitor electrodeSIEMENS AG·Filed 1998·Granted Dec 21, 1999·14 cites·11 claims
- 1452US6296777B1Structuring processINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 2, 2001·17 cites·22 claims
- 1548US6495415B2Method for fabricating a patterned layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 17, 2002·3 cites·25 claims
- 1647US6315913B1Structuring methodINFINEON TECHNOLOGIES AG·Filed 1998·Granted Nov 13, 2001·12 cites·37 claims
- 1747US6210595B1Method for producing structures having a high aspect ratio and structure having a high aspect ratioINFINEON TECHNOLOGIES AG·Filed 1998·Granted Apr 3, 2001·12 cites·17 claims
- 1846US6852240B2Method of manufacturing a ferroelectric capacitor configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 8, 2005·3 cites·3 claims
- 1946US6716643B1Method for producing a semiconductor memory elementINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 6, 2004·1 cites·4 claims
- 2046US6136659AProduction process for a capacitor electrode formed of a platinum metalINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 24, 2000·12 cites·17 claims
- 2145US6613640B2Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 2, 2003·1 cites·5 claims
- 2244US6566220B2Method for fabricating a semiconductor memory componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 20, 2003·3 cites·12 claims
- 2343US6593228B2Method of fabricating a patterned metal-containing layer on a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 15, 2003·2 cites·11 claims
- 2438US6656376B1Process for cleaning CVD unitsSIEMENS AG·Filed 1999·Granted Dec 2, 2003·7 cites·27 claims
- 2537US6537900B2Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·0 cites·17 claims
- 2636US6649483B2Method for fabricating a capacitor configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 18, 2003·0 cites·38 claims
- 2736US2001055664A1Electronic component and method for etching an insulating layer of a componentFiled 2001·Application pending·0 cites
- 2836US2001054599A1Etching methodFiled 2001·Application pending·0 cites
- 2934US6825116B2Method for removing structuresINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 30, 2004·0 cites·10 claims
- 3033US6818503B2Method for fabricating a semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 16, 2004·0 cites·25 claims
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