Inventor · disambiguated record
Trinh Hai Dang
Also filed as: DANG TRINH HAI
8 granted patents·54 citations·filing 2013–2019
83Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8
Top patents by PatentIndex Score
8 records- 0196US9431609B2Oxide film scheme for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·30 cites·20 claims
- 0294US9577191B2RRAM cell bottom electrode formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·11 cites·20 claims
- 0391US10193065B2High K scheme to improve retention performance of resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 29, 2019·9 cites·20 claims
- 0478US9876167B2High yield RRAM cell with optimized film schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·20 claims
- 0567US11637239B2High yield RRAM cell with optimized film schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 25, 2023·0 cites·20 claims
- 0667US9130026B2Crystalline layer for passivation of III-N surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 8, 2015·2 cites·20 claims
- 0759US10388865B2High yield RRAM cell with optimized film schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 20, 2019·0 cites·20 claims
- 0855US10170699B2RRAM cell bottom electrode formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →