Inventor · disambiguated record
Dae-Hong Ko
Also filed as: KO DAE-HONG
8 granted patents·4 pending applications·265 citations·filing 1996–2024
88Inventor score
Files withSAMSUNG ELECTRONICS CO LTD7INDUSTRY ACADEMIC COOPERTION FOUNDATION YONSEI UNIV1KIM IK-SOO1KIM MYUNG-JONG1UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV1
Top patents by PatentIndex Score
12 records- 0187US6087257AMethods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 11, 2000·99 cites·24 claims
- 0287US5723384AMethod for manufacturing a capacitor in a semiconductor device using selective tungsten nitride thin filmSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 3, 1998·91 cites·18 claims
- 0374US5970309AMethod of manufacturing a capacitor and a capacitor electrode in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 19, 1999·36 cites·21 claims
- 0456US5852319AGate electrode for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 22, 1998·16 cites·5 claims
- 0555US2024339503A1Epitaxial wafer, Method of manufacturing the epitaxial wafer, and Method of manufacturing a semiconductor device using the epitaxial waferUIF UNIV INDUSTRY FOUNDATION YONSEI UNIV·Filed 2024·Application pending·0 cites
- 0653US6693032B2Method of forming a contact structure having an anchoring portionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 17, 2004·5 cites·8 claims
- 0751US6476489B1Apparatus and manufacturing method for semiconductor device adopting NA interlayer contact structureSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 5, 2002·11 cites·21 claims
- 0846US2023232608A1Epitaxial wafer, method of manufacturing the epitaxial wafer, and method of manufacturing a semiconductor device using the epitaxial waferINDUSTRY ACADEMIC COOPERTION FOUNDATION YONSEI UNIV·Filed 2022·Application pending·0 cites
- 0942US2011284815A1Phase-change memory devices having stress relief buffersKIM IK-SOO·Filed 2011·Application pending·0 cites
- 1040US8420551B2Methods of fabricating semiconductor devices and semiconductor devices fabricated by the sameKIM MYUNG-JONG·Filed 2010·Granted Apr 16, 2013·0 cites·19 claims
- 1138US6211082B1Chemical vapor deposition of tungsten using nitrogen-containing gasSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 3, 2001·7 cites·8 claims
- 1237US2014339490A1Resistive switching memory device having improved nonlinearity and method of fabricating the sameUNIV YONSEI IACF·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →