Inventor · disambiguated record
Shane P. Leiphart
Also filed as: LEIPHART SHANE · LEIPHART SHANE P
23 granted patents·2 pending applications·436 citations·filing 1996–2006
97Inventor score
Top patents by PatentIndex Score
25 records- 0196US7456452B2Light sensor having undulating features for CMOS imagerMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 25, 2008·53 cites·33 claims
- 0289US5985102AKit for electrically isolating collimator of PVD chamber, chamber so modified, and method of usingMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·62 cites·23 claims
- 0384US5783282AResputtering to achieve better step coverage of contact holesMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 21, 1998·50 cites·16 claims
- 0481US6346177B2Method of in-situ cleaning and deposition of device structures in a high density plasma environmentMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 12, 2002·17 cites·26 claims
- 0581US6121134AHigh aspect ratio metallization structures and processes for fabricating the sameMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 19, 2000·39 cites·19 claims
- 0679US6660136B2Method of forming a non-volatile resistance variable device and method of forming a metal layer comprising silver and tungstenMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 9, 2003·22 cites·53 claims
- 0774US6828233B2Enhanced barrier liner formation for viasMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 7, 2004·11 cites·20 claims
- 0867US6187151B1Method of in-situ cleaning and deposition of device structures in a high density plasma environmentMICRON TECHNOLOGY INC·Filed 1997·Granted Feb 13, 2001·25 cites·14 claims
- 0965US6495921B1High aspect ratio metallization structuresMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 17, 2002·9 cites·10 claims
- 1063US5705042AElectrically isolated collimator and methodMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 6, 1998·28 cites·23 claims
- 1160US6323124B1Resputtering to achieve better step coverageMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 27, 2001·16 cites·27 claims
- 1258US6833623B2Enhanced barrier liner formation for viaMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 21, 2004·15 cites·14 claims
- 1358US6690094B2High aspect ratio metallization structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 10, 2004·6 cites·16 claims
- 1455US5882488AResputtering to achieve better step coverageMICRON TECHNOLOGY INC·Filed 1998·Granted Mar 16, 1999·13 cites·15 claims
- 1553US5997699AInsitu faceting during depositionMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 7, 1999·19 cites·50 claims
- 1653US2006205209A1Enhanced barrier liner formation for viasLEIPHART SHANE P·Filed 2006·Application pending·0 cites
- 1751US6057235AMethod for reducing surface charge on semiconducter wafers to prevent arcing during plasma depositionMICRON TECHNOLOGY INC·Filed 1997·Granted May 2, 2000·14 cites·17 claims
- 1850US7163893B2Advanced barrier liner formation for viasMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 16, 2007·1 cites·11 claims
- 1947US6090246AMethods and apparatus for detecting reflected neutrals in a sputtering processMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 18, 2000·7 cites·26 claims
- 2046US6258718B1Method for reducing surface charge on semiconductor wafers to prevent arcing during plasma depositionMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 10, 2001·1 cites·20 claims
- 2144US5928480AMethods of sputter depositing of metals onto substrates, and methods of forming plasmaMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 27, 1999·8 cites·14 claims
- 2244US5667645AMethod of sputter depositionMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 16, 1997·8 cites·12 claims
- 2341US6224942B1Method of forming an aluminum comprising line having a titanium nitride comprising layer thereonMICRON TECHNOLOGY INC·Filed 1999·Granted May 1, 2001·8 cites·9 claims
- 2438US6800180B1Resputtering to achieve better step coverageMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 5, 2004·4 cites·36 claims
- 2538US2002025372A1Method of forming an aluminum comprising line having a titanium nitride comprising layer thereonFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →