Inventor · disambiguated record
Erwin Jacobs
Also filed as: JACOBS ERWIN · JACOBS ERWIN P
14 granted patents·723 citations·filing 1975–1987
94Inventor score
Files withSIEMENS AG14
Top patents by PatentIndex Score
14 records- 0198US4257832AProcess for producing an integrated multi-layer insulator memory cellSIEMENS AG·Filed 1979·Granted Mar 24, 1981·157 cites·9 claims
- 0295US4761384AForming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processingSIEMENS AG·Filed 1987·Granted Aug 2, 1988·154 cites·16 claims
- 0395US4342149AMethod of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantationSIEMENS AG·Filed 1980·Granted Aug 3, 1982·131 cites·4 claims
- 0492US4306353AProcess for production of integrated MOS circuits with and without MNOS memory transistors in silicon-gate technologySIEMENS AG·Filed 1980·Granted Dec 22, 1981·93 cites·6 claims
- 0578US4717686AMethod for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrateSIEMENS AG·Filed 1986·Granted Jan 5, 1988·37 cites·21 claims
- 0671US4434543AProcess for producing adjacent tubs implanted with dopant ions in the manufacture of LSI complementary MOS field effect transistorsSIEMENS AG·Filed 1982·Granted Mar 6, 1984·33 cites·15 claims
- 0770US4525920AMethod of making CMOS circuits by twin tub process and multiple implantationsSIEMENS AG·Filed 1984·Granted Jul 2, 1985·33 cites·14 claims
- 0870US4027320AStatic storage element and process for the production thereofSIEMENS AG·Filed 1975·Granted May 31, 1977·18 cites·2 claims
- 0959US4525378AMethod for manufacturing VLSI complementary MOS field effect circuitsSIEMENS AG·Filed 1984·Granted Jun 25, 1985·14 cites·7 claims
- 1053US4459741AMethod for producing VLSI complementary MOS field effect transistor circuitsSIEMENS AG·Filed 1982·Granted Jul 17, 1984·18 cites·8 claims
- 1151US4330850AMNOS Memory cellSIEMENS AG·Filed 1980·Granted May 18, 1982·11 cites·8 claims
- 1242US4511996AMemory cell having a double gate field effect transistor and a method for its operationSIEMENS AG·Filed 1982·Granted Apr 16, 1985·5 cites·10 claims
- 1341US4459740AMethod for manufacturing VLSI complementary MOS field effect transistor circuits in silicon gate technologySIEMENS AG·Filed 1982·Granted Jul 17, 1984·11 cites·11 claims
- 1437US4603472AMethod of making MOS FETs using silicate glass layer as gate edge masking for ion implantationSIEMENS AG·Filed 1985·Granted Aug 5, 1986·8 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →