Inventor · disambiguated record
Kenji Iso
Also filed as: ISO KENJI
20 granted patents·14 pending applications·60 citations·filing 2008–2025
92Inventor score
Top patents by PatentIndex Score
34 records- 0195US11987903B2N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production methodMITSUBISHI CHEM CORP·Filed 2021·Granted May 21, 2024·3 cites·19 claims
- 0294US12351943B2n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production methodMITSUBISHI CHEM CORP·Filed 2024·Granted Jul 8, 2025·1 cites·23 claims
- 0393US8368109B2Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiencyUNIV CALIFORNIA·Filed 2011·Granted Feb 5, 2013·9 cites·18 claims
- 0487US8158497B2Planar nonpolar m-plane group III nitride films grown on miscut substratesHIRAI ASAKO·Filed 2008·Granted Apr 17, 2012·9 cites·20 claims
- 0587US8124991B2Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiencyISO KENJI·Filed 2008·Granted Feb 28, 2012·14 cites·22 claims
- 0687US7847280B2Nonpolar III-nitride light emitting diodes with long wavelength emissionUNIV CALIFORNIA·Filed 2008·Granted Dec 7, 2010·10 cites·27 claims
- 0781US2025290228A1n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHODMITSUBISHI CHEM CORP·Filed 2025·Application pending·0 cites
- 0880US8044417B2Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporationUNIV CALIFORNIA·Filed 2009·Granted Oct 25, 2011·6 cites·20 claims
- 0974US10961619B2Method for producing GaN crystalMITSUBISHI CHEM CORP·Filed 2018·Granted Mar 30, 2021·1 cites·19 claims
- 1072US8679254B2Vapor phase epitaxy apparatus of group III nitride semiconductorISO KENJI·Filed 2011·Granted Mar 25, 2014·1 cites·7 claims
- 1172US8278128B2Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cutMASUI HISASHI·Filed 2009·Granted Oct 2, 2012·6 cites·26 claims
- 1269US11371140B2Method for producing GaN crystalMITSUBISHI CHEM CORP·Filed 2021·Granted Jun 28, 2022·0 cites·15 claims
- 1369US2024413209A1Gan substrateMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1462US12476108B2GaN substrate wafer and production method for sameMITSUBISHI CHEM CORP·Filed 2021·Granted Nov 18, 2025·0 cites·24 claims
- 1562US2025313992A1GaN SUBSTRATEMITSUBISHI CHEM CORP·Filed 2025·Application pending·0 cites
- 1662US2025003113A1Gan epitaxial substrateMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1761US2024413210A1Gan epitaxial substrateMITSUBISHI CHEM CORP·Filed 2024·Application pending·0 cites
- 1860US9340899B2Planar nonpolar group-III nitride films grown on miscut substratesUNIV CALIFORNIA·Filed 2014·Granted May 17, 2016·0 cites·20 claims
- 1959US12288686B2GaN substrate wafer and method for manufacturing sameMITSUBISHI CHEM CORP·Filed 2021·Granted Apr 29, 2025·0 cites·33 claims
- 2059US8791000B2Planar nonpolar group-III nitride films grown on miscut substratesUNIV CALIFORNIA·Filed 2014·Granted Jul 29, 2014·0 cites·17 claims
- 2158US9828695B2Planar nonpolar group-III nitride films grown on miscut substratesUNIV CALIFORNIA·Filed 2016·Granted Nov 28, 2017·0 cites·18 claims
- 2256US2009039356A1Planar nonpolar m-plane group iii-nitride films grown on miscut substratesUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
- 2355US2025198052A1GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTALMITSUBISHI CHEM CORP·Filed 2025·Application pending·0 cites
- 2454US8691671B2Planar nonpolar group-III nitride films grown on miscut substratesHIRAI ASAKO·Filed 2012·Granted Apr 8, 2014·0 cites·21 claims
- 2552US8642993B2Nonpolar III-nitride light emitting diodes with long wavelength emissionYAMADA HISASHI·Filed 2010·Granted Feb 4, 2014·0 cites·10 claims
- 2652US2017327969A1Planar nonpolar group iii-nitride films grown on miscut substratesISO KENJI·Filed 2017·Application pending·0 cites
- 2750US10224201B2C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2017·Granted Mar 5, 2019·0 cites·20 claims
- 2850US2011237054A1Planar nonpolar group iii-nitride films grown on miscut substratesUNIV CALIFORNIA·Filed 2011·Application pending·0 cites
- 2950US2022010455A1GaN SUBSTRATE WAFER AND METHOD FOR MANUFACTURING GaN SUBSTRATE WAFERMITSUBISHI CHEM CORP·Filed 2021·Application pending·0 cites
- 3049US2012049158A1Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporationMASUI HISASHI·Filed 2011·Application pending·0 cites
- 3147US2009141502A1Light output enhanced gallium nitride based thin light emitting diodeUNIV CALIFORNIA·Filed 2008·Application pending·0 cites
- 3243US10177217B2C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2017·Granted Jan 8, 2019·0 cites·22 claims
- 3340US2010229794A1Vapor phase epitaxy apparatus of group iii nitride semiconductorISO KENJI·Filed 2010·Application pending·0 cites
- 3433US2010307418A1Vapor phase epitaxy apparatus of group iii nitride semiconductorJAPAN PIONICS·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →