Inventor · disambiguated record
Scott D. Hector
Also filed as: HECTOR SCOTT D · HECTOR SCOTT DANIEL
12 granted patents·1 pending application·345 citations·filing 1998–2023
92Inventor score
Top patents by PatentIndex Score
13 records- 0192US6352803B1Coatings on reflective mask substratesUNIV CALIFORNIA·Filed 2000·Granted Mar 5, 2002·69 cites·20 claims
- 0291US6815129B1Compensation of flare-induced CD changes EUVLEUV LLC·Filed 2000·Granted Nov 9, 2004·57 cites·32 claims
- 0389US6492067B1Removable pellicle for lithographic mask protection and handlingEUV LLC·Filed 1999·Granted Dec 10, 2002·75 cites·21 claims
- 0483US7282307B2Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 16, 2007·23 cites·24 claims
- 0582US6986971B2Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jan 17, 2006·23 cites·29 claims
- 0675US6673520B2Method of making an integrated circuit using a reflective maskMOTOROLA INC·Filed 2001·Granted Jan 6, 2004·15 cites·20 claims
- 0768US6596465B1Method of manufacturing a semiconductor componentMOTOROLA INC·Filed 1999·Granted Jul 22, 2003·47 cites·18 claims
- 0865US12480988B2Systems and methods for silicon crack detection structureAPPLE INC·Filed 2023·Granted Nov 25, 2025·0 cites·29 claims
- 0964US6986974B2Attenuated phase shift mask for extreme ultraviolet lithography and method thereforeFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 17, 2006·11 cites·29 claims
- 1061US6835671B2Method of making an integrated circuit using an EUV mask formed by atomic layer depositionFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Dec 28, 2004·6 cites·26 claims
- 1157US7904869B2Method of area compaction for integrated circuit layout designFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 8, 2011·2 cites·14 claims
- 1257US6001513AMethod for forming a lithographic mask used for patterning semiconductor dieMOTOROLA INC·Filed 1998·Granted Dec 14, 1999·17 cites·18 claims
- 1337US2004224261A1Unitary dual damascene process using imprint lithographyFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →