Inventor · disambiguated record
Sung-Po Wei
Also filed as: WEI SUNG-PO
11 granted patents·60 citations·filing 2007–2019
89Inventor score
Technology areasH10P
Top patents by PatentIndex Score
11 records- 0193US8809143B2Fabrication of MOS device with schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2012·Granted Aug 19, 2014·9 cites·8 claims
- 0292US8093651B2MOS device with integrated schottky diode in active region contact trenchBHALLA ANUP·Filed 2007·Granted Jan 10, 2012·16 cites·9 claims
- 0389US9236450B2Fabrication of MOS device with schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Jan 12, 2016·5 cites·9 claims
- 0489US8450794B2MOS device with varying contact trench lengthsBHALLA ANUP·Filed 2011·Granted May 28, 2013·7 cites·9 claims
- 0589US8362547B2MOS device with Schottky barrier controlling layerALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Jan 29, 2013·9 cites·14 claims
- 0686US8728890B2Fabrication of MOS device with integrated Schottky diode in active region contact trenchALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted May 20, 2014·5 cites·12 claims
- 0784US8928079B2MOS device with low injection diodeBHALLA ANUP·Filed 2012·Granted Jan 6, 2015·5 cites·22 claims
- 0876US8283723B2MOS device with low injection diodeBHALLA ANUP·Filed 2007·Granted Oct 9, 2012·4 cites·24 claims
- 0969US10978585B2MOS device with island regionALPHA & OMEGA SEMICONDUCTOR·Filed 2019·Granted Apr 13, 2021·0 cites·10 claims
- 1064US10535764B2Device and fabrication of MOS device with island regionALPHA & OMEGA SEMICONDUCTOR·Filed 2018·Granted Jan 14, 2020·0 cites·4 claims
- 1158US10074742B2MOS device with island regionALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 11, 2018·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →