Inventor · disambiguated record
Chongman Yun
Also filed as: YUN CHONGMAN
8 granted patents·5 pending applications·47 citations·filing 2006–2023
84Inventor score
Top patents by PatentIndex Score
13 records- 0186US8928077B2Superjunction structures for power devicesLEE JAEGIL·Filed 2008·Granted Jan 6, 2015·17 cites·25 claims
- 0286US8357976B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Jan 22, 2013·8 cites·8 claims
- 0382US9595596B2Superjunction structures for power devicesFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Mar 14, 2017·3 cites·21 claims
- 0482US7859057B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 28, 2010·8 cites·16 claims
- 0582US7586156B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 8, 2009·8 cites·38 claims
- 0670US8786010B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Jul 22, 2014·3 cites·35 claims
- 0753US12501636B2Power semiconductor device capable of controlling slope of current and voltage during dynamic switchingTRINNO TECH CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·10 claims
- 0848US2025203982A1Power semiconductor device having withstand voltage region of vld structure, and method for manufacturing sameTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 0947US2025318275A1Silicon carbide power semiconductor device having folded channel area, and manufacturing method thereforTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 1046US12087848B2Power semiconductor device with reduced loss and manufacturing method the sameTRINNO TECH CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·7 claims
- 1146US2023411511A1Power semiconductor device with dual shield structure in silicon carbide and manufacturing method thereofTRINNO TECH CO LTD·Filed 2023·Application pending·0 cites
- 1242US2012273916A1Superjunction Structures for Power Devices and Methods of ManufactureYEDINAK JOSEPH A·Filed 2011·Application pending·0 cites
- 1341US2007181927A1Charge balance insulated gate bipolar transistorYEDINAK JOSEPH A·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →