Inventor · disambiguated record
Praveen Muraleedharan Shenoy
Also filed as: SHENOY PRAVEEN · SHENOY PRAVEEN M · SHENOY PRAVEEN MURALEEDHARAN
21 granted patents·3 pending applications·329 citations·filing 1996–2024
95Inventor score
Files withFAIRCHILD SEMICONDUCTOR10INFINEON TECHNOLOGIES AMERICAS CORP6YEDINAK JOSEPH A4LEE JAEGIL1SHENOY PRAVEEN MURALEEDHARAN1
Top patents by PatentIndex Score
24 records- 0196US9368587B2Accumulation-mode field effect transistor with improved current capabilityFAIRCHILD SEMICONDUCTOR·Filed 2014·Granted Jun 14, 2016·12 cites·16 claims
- 0294US8673700B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Mar 18, 2014·23 cites·19 claims
- 0390US8772868B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Jul 8, 2014·12 cites·20 claims
- 0488US5753938AStatic-induction transistors having heterojunction gates and methods of forming sameUNIV NORTH CAROLINA STATE·Filed 1996·Granted May 19, 1998·107 cites·5 claims
- 0587US10833671B2Increasing forward biased safe operating area by source segmentationINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2018·Granted Nov 10, 2020·4 cites·20 claims
- 0686US8928077B2Superjunction structures for power devicesLEE JAEGIL·Filed 2008·Granted Jan 6, 2015·17 cites·25 claims
- 0783US7199442B2Schottky diode structure to reduce capacitance and switching losses and method of making sameFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Apr 3, 2007·30 cites·27 claims
- 0882US9595596B2Superjunction structures for power devicesFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Mar 14, 2017·3 cites·21 claims
- 0982US7586156B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 8, 2009·8 cites·38 claims
- 1081US8836028B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Sep 16, 2014·8 cites·21 claims
- 1181US6573560B2Trench MOSFET with reduced Miller capacitanceFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jun 3, 2003·30 cites·11 claims
- 1279US10998403B2Device with increased forward biased safe operating area (FBSOA) through using source segments having different threshold voltagesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2019·Granted May 4, 2021·2 cites·20 claims
- 1378US7534683B2Method of making a MOS-gated transistor with reduced miller capacitanceFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted May 19, 2009·6 cites·16 claims
- 1478US7265415B2MOS-gated transistor with reduced miller capacitanceFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Sep 4, 2007·20 cites·23 claims
- 1577US8518777B2Method for forming accumulation-mode field effect transistor with improved current capabilitySHENOY PRAVEEN MURALEEDHARAN·Filed 2011·Granted Aug 27, 2013·4 cites·14 claims
- 1675US6831329B2Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn offFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Dec 14, 2004·21 cites·26 claims
- 1774US7936008B2Structure and method for forming accumulation-mode field effect transistor with improved current capabilityFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 3, 2011·3 cites·20 claims
- 1874US2024429298A1Increasing forward biased safe operating area using different threshold voltage segmentsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2024·Application pending·0 cites
- 1973US6737731B1Soft recovery power diodeFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted May 18, 2004·19 cites·41 claims
- 2071US11688770B2Method of increasing forward biased safe operating area using different threshold voltage segmentsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2021·Granted Jun 27, 2023·0 cites·17 claims
- 2164US12230686B2Device having increased forward biased safe operating area using source segments with different threshold voltages and method of operating thereofINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2021·Granted Feb 18, 2025·0 cites·20 claims
- 2263US11217666B2Method of increasing forward biased safe operating area using different threshold voltage segmentsINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2019·Granted Jan 4, 2022·0 cites·10 claims
- 2354US2003225632A1Method and system for providing personalized online shopping serviceFiled 2002·Application pending·0 cites
- 2442US2012273916A1Superjunction Structures for Power Devices and Methods of ManufactureYEDINAK JOSEPH A·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →