Inventor · disambiguated record
Yung-Haw Liaw
Also filed as: LIAW YUNG HAW
10 granted patents·312 citations·filing 1992–2014
91Inventor score
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10 records- 0188US6247599B1Electrostatic discharge-free container equipped with metal shieldTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 19, 2001·41 cites·7 claims
- 0280US5454871ASOG coated apparatus to solve SOG non-uniformity in the VLSI processTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Oct 3, 1995·65 cites·3 claims
- 0378US5731243AMethod of cleaning residue on a semiconductor wafer bonding padTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Mar 24, 1998·66 cites·13 claims
- 0477US5334554ANitrogen plasma treatment to prevent field device leakage in VLSI processingTAIWAN SEMICONDUCTOR MFG·Filed 1992·Granted Aug 2, 1994·69 cites·17 claims
- 0566US5434096AMethod to prevent silicide bubble in the VLSI processTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Jul 18, 1995·28 cites·28 claims
- 0663US6365303B1Electrostatic discharge damage prevention method on masksTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 2, 2002·15 cites·20 claims
- 0743US9892982B2Method for controlling exhaust flow in wafer processing moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 13, 2018·0 cites·13 claims
- 0840US5371046AMethod to solve sog non-uniformity in the VLSI processTAIWAN SEMICONDUCTOR MFG·Filed 1993·Granted Dec 6, 1994·10 cites·9 claims
- 0938US6143618AProcedure for elimating flourine degradation of WSix /oxide/polysilicon capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·10 cites·20 claims
- 1036US6127269AMethod for enhancing sheet resistance uniformity of chemical vapor deposited (CVD) tungsten silicide layersTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 3, 2000·8 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →