Inventor · disambiguated record
Udo Schwalke
Also filed as: SCHWALKE UDO
28 granted patents·2 pending applications·722 citations·filing 1991–2017
97Inventor score
Top patents by PatentIndex Score
30 records- 0185US5700712AMethod for manufacturing an insulating trench in an SOI substrate for smartpower technologiesSIEMENS AG·Filed 1995·Granted Dec 23, 1997·80 cites·10 claims
- 0285US5445988AMethod for manufacturing a trench in a substrate for use in smart-power technologySIEMENS AG·Filed 1994·Granted Aug 29, 1995·82 cites·13 claims
- 0379US5416041AMethod for producing an insulating trench in an SOI substrateSIEMENS AG·Filed 1994·Granted May 16, 1995·66 cites·8 claims
- 0477US5473181AIntegrated circuit arrangement having at least one power component and low-voltage componentsSIEMENS AG·Filed 1994·Granted Dec 5, 1995·40 cites·9 claims
- 0574US5965926ACircuit structure having at least one MOS transistor and method for its productionSIEMENS AG·Filed 1997·Granted Oct 12, 1999·35 cites·4 claims
- 0674US5344793AFormation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formationSIEMENS AG·Filed 1993·Granted Sep 6, 1994·33 cites·8 claims
- 0772US5164333AMethod for manufacturing a multi-layer gate electrode for a mos transistorSIEMENS AG·Filed 1991·Granted Nov 17, 1992·36 cites·7 claims
- 0869US5496765AMethod for manufacturing an insulating trench in a substrate for smart-power technologiesSIEMENS AG·Filed 1995·Granted Mar 5, 1996·37 cites·8 claims
- 0966US5190888AMethod for producing a doped polycide layer on a semiconductor substrateSIEMENS AG·Filed 1991·Granted Mar 2, 1993·35 cites·20 claims
- 1064US5998271AMethod of producing an MOS transistorSIEMENS AG·Filed 1996·Granted Dec 7, 1999·29 cites·8 claims
- 1164US5932919AMOSFETs with improved short channel effectsSIEMENS AG·Filed 1997·Granted Aug 3, 1999·19 cites·6 claims
- 1264US5882965AProcess for manufacturing an integrated CMOS circuitSIEMENS AG·Filed 1996·Granted Mar 16, 1999·24 cites·7 claims
- 1364US5780929AFormation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formationSIEMENS AG·Filed 1996·Granted Jul 14, 1998·21 cites·20 claims
- 1463US5726094AProcess for producing a diffusion region adjacent to a recess in a substrateSIEMENS AG·Filed 1995·Granted Mar 10, 1998·31 cites·9 claims
- 1561US5268317AMethod of forming shallow junctions in field effect transistorsSIEMENS AG·Filed 1991·Granted Dec 7, 1993·34 cites·28 claims
- 1653US6037196AProcess for producing an integrated circuit device with at least one MOS transistorSIEMENS AG·Filed 1996·Granted Mar 14, 2000·18 cites·5 claims
- 1753US5439831ALow junction leakage MOSFETsSIEMENS AG·Filed 1994·Granted Aug 8, 1995·20 cites·8 claims
- 1851US5872382ALow junction leakage mosfets with particular sidewall spacer structureSIEMENS AG·Filed 1997·Granted Feb 16, 1999·15 cites·5 claims
- 1947US2016218212A1Field effect transistor arrangementUNIV DARMSTADT TECH·Filed 2014·Application pending·0 cites
- 2046US6380015B1MOSFETs with improved short channel effects and method of making the sameSIEMENS AG·Filed 1999·Granted Apr 30, 2002·8 cites·3 claims
- 2144US5882964AProcess for the production of an integrated CMOS circuitSIEMENS AG·Filed 1996·Granted Mar 16, 1999·11 cites·20 claims
- 2244US2018076323A1Method for operation of a field effect transistor arrangementUNIV DARMSTADT TECH·Filed 2017·Application pending·0 cites
- 2341US6057211AMethod for manufacturing an integrated circuit arrangementSIEMENS AG·Filed 1997·Granted May 2, 2000·9 cites·10 claims
- 2441US5528053AThin-film transistor and method for the manufacture thereofSIEMENS AG·Filed 1994·Granted Jun 18, 1996·8 cites·5 claims
- 2541US5470782AMethod for manufacturing an integrated circuit arrangementSIEMENS AG·Filed 1994·Granted Nov 28, 1995·16 cites·9 claims
- 2639US5602410AOff-state gate-oxide field reduction in CMOSSIEMENS AG·Filed 1995·Granted Feb 11, 1997·7 cites·8 claims
- 2738US5913115AMethod for producing a CMOS circuitSIEMENS AG·Filed 1998·Granted Jun 15, 1999·7 cites·7 claims
- 2832US5817570ASemiconductor structure for an MOS transistor and method for fabricating the semiconductor structureSIEMENS AG·Filed 1997·Granted Oct 6, 1998·1 cites·8 claims
- 2931US6239478B1Semiconductor structure for a MOS transistorINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 29, 2001·0 cites·1 claims
- 3029US6913983B1Integrated circuit arrangement and method for the manufacture thereofINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jul 5, 2005·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →