Inventor · disambiguated record
Tsuguo Fukuda
Also filed as: FUKUDA TSUGUO
39 granted patents·16 pending applications·341 citations·filing 1975–2018
98Inventor score
Files withNGK INSULATORS LTD9TOKYO SHIBAURA ELECTRIC CO8AGENCY IND SCIENCE TECHN4FUKUDA TSUGUO4TOKUYAMA CORP4
Top patents by PatentIndex Score
55 records- 0189US4022652AMethod of growing multiple monocrystalline layersTOKYO SHIBAURA ELECTRIC CO·Filed 1975·Granted May 10, 1977·42 cites·12 claims
- 0287US7608828B2Solid solution material of rare earth element fluoride (polycrystal and single crystal), and method for preparation thereof, and radiation detector and test deviceSTELLA CHEMIFA CORP·Filed 2005·Granted Oct 27, 2009·16 cites·27 claims
- 0378US7323053B2Pulling-down apparatus and container thereforTDK CORP·Filed 2006·Granted Jan 29, 2008·4 cites·13 claims
- 0478US4539067AMethod and apparatus for manufacturing single crystalsTOKYO SHIBAURA ELECTRIC CO·Filed 1983·Granted Sep 3, 1985·19 cites·4 claims
- 0573US4144117AMethod for producing a lithium tantalate single crystalTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted Mar 13, 1979·20 cites·14 claims
- 0669US4606037AApparatus for manufacturing semiconductor single crystalAGENCY IND SCIENCE TECHN·Filed 1984·Granted Aug 12, 1986·14 cites·10 claims
- 0767US4586979AMethod for manufacture of III-V group compound semiconductor single crystalAGENCY IND SCIENCE TECHN·Filed 1984·Granted May 6, 1986·16 cites·6 claims
- 0866US6180872B1Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth memberNGK INSULATORS LTD·Filed 2000·Granted Jan 30, 2001·5 cites·23 claims
- 0961US7413606B2Method for producing crystal of fluorideSTELLA CHEMIFA CORP·Filed 2004·Granted Aug 19, 2008·4 cites·11 claims
- 1061US6074477AProcess and an apparatus for producing a composite oxide single crystal bodyNGK INSULATORS LTD·Filed 1998·Granted Jun 13, 2000·20 cites·27 claims
- 1161US4496424AMethod for manufacture of III-V compound semiconducting single crystalAGENCY IND SCIENCE TECHN·Filed 1983·Granted Jan 29, 1985·11 cites·3 claims
- 1257US9834858B2Pr-containing scintillator single crystal, method of manufacturing the same, radiation detector, and inspection apparatusYOSHIKAWA AKIRA·Filed 2005·Granted Dec 5, 2017·1 cites·12 claims
- 1357US7364715B2As-grown single crystal of alkaline earth metal fluorideTOKUYAMA CORP·Filed 2003·Granted Apr 29, 2008·3 cites·14 claims
- 1456US5919304AMethod and apparatus for producing oxide series single crystalsNGK INSULATORS LTD·Filed 1996·Granted Jul 6, 1999·12 cites·9 claims
- 1556US4371419AMethod for producing a lithium tantalate single crystalTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Feb 1, 1983·12 cites·11 claims
- 1654US5866092AGarnet single crystal for substrate of magneto-optic element and method of manufacturing thereofMITSUBISHI GAS CHEMICAL CO·Filed 1997·Granted Feb 2, 1999·11 cites·3 claims
- 1752US5667585AMethod for the preparation of wire-formed silicon crystalSHINETSU CHEMICAL CO·Filed 1995·Granted Sep 16, 1997·12 cites·13 claims
- 1852US4637854AMethod for producing GaAs single crystalAGENCY IND SCIENCE TECHN·Filed 1984·Granted Jan 20, 1987·12 cites·7 claims
- 1952US2015104375A1Starting material alumina for production of sapphire single crystal and method for producing sapphire single crystalSUMITOMO CHEMICAL CO·Filed 2013·Application pending·0 cites
- 2051US7347956B2Luminous material for scintillator comprising single crystal of Yb mixed crystal oxideJAPAN SCIENCE & TECH AGENCY·Filed 2003·Granted Mar 25, 2008·4 cites·3 claims
- 2151US2008008438A1Self-Coated Single Crystal, And Production Apparatus And Process ThereforTOHOKU TECHNO ARCH CO LTD·Filed 2005·Application pending·0 cites
- 2250US6400061B1Surface acoustic wave device and substrate thereofTDK CORP·Filed 2000·Granted Jun 4, 2002·4 cites·10 claims
- 2350US5985022AOptoelectric articles and a process for producing the sameNGK INSULATORS LTD·Filed 1997·Granted Nov 16, 1999·8 cites·13 claims
- 2449US5650006AProcess for producing a lithium niobate-lithium tantalate single crystal substrateNGK INSULATORS LTD·Filed 1995·Granted Jul 22, 1997·9 cites·5 claims
- 2549US5431124ARutile single crystals and their growth processesCHICHIBU CEMENT KK·Filed 1994·Granted Jul 11, 1995·8 cites·6 claims
- 2648US8333838B2Method for producing fluoride crystalFUKUDA TSUGUO·Filed 2010·Granted Dec 18, 2012·0 cites·8 claims
- 2748US6303048B1Langasite-type crystals and a method for manufacturing the sameVICTOR COMPANY OF JAPAN·Filed 1999·Granted Oct 16, 2001·10 cites·1 claims
- 2848US5554219AProcess for producing single-crystal bulk zinc selenideDOWA MINING CO·Filed 1995·Granted Sep 10, 1996·9 cites·10 claims
- 2948US4397813AApparatus for manufacturing single crystalsTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Aug 9, 1983·9 cites·2 claims
- 3046US4135963ALithium tantalate single crystal growth from a platinum-rhodium crucible in an inert gas, nitrogen or reducing gas atmosphereTOKYO SHIBAURA ELECTRIC CO·Filed 1977·Granted Jan 23, 1979·8 cites·4 claims
- 3145US5517942AProcess for producing optoelectric articlesNGK INSULATORS LTD·Filed 1995·Granted May 21, 1996·7 cites·7 claims
- 3245US2010104495A1Method for producing nitride semiconductor, crystal growth rate increasing agent, single crystal nitride, wafer and deviceMITSUBISHI CHEM CORP·Filed 2007·Application pending·0 cites
- 3345US2009092536A1Crystal production process using supercritical solvent, crystal growth apparatus, crystal and deviceUNIV TOHOKU·Filed 2006·Application pending·0 cites
- 3444US2014205840A1Method for producing nitride single crystal and autoclave for use in the methodAOKI KENSUKE·Filed 2011·Application pending·0 cites
- 3544US2007175383A1Process for producing single crystal of gallium-containing nitrideJAPAN SCIENCE & TECH AGENCY·Filed 2005·Application pending·0 cites
- 3643US6072118AProcess and apparatus for growing crystalline silicon plates by pulling the plate through a growth memberNGK INSULATORS LTD·Filed 1997·Granted Jun 6, 2000·5 cites·24 claims
- 3743US2008213163A1Method for Producing BaLiF3 Single CrystalTOKUYAMA CORP·Filed 2008·Application pending·0 cites
- 3843US2009165702A1Self-coated single crystal, and production apparatus and process thereforFUKUDA CRYSTAL LAB·Filed 2008·Application pending·0 cites
- 3942US5539569AOptoelectric articles and a process for producing the sameNGK INSULATORS LTD·Filed 1995·Granted Jul 23, 1996·9 cites·14 claims
- 4042US4431476AMethod for manufacturing gallium phosphide single crystalsTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 14, 1984·5 cites·6 claims
- 4141US6030449AGarnet single crystal for substrate of magneto-optic element and method of manufacturing thereofMITSUBISHI GAS CHEMICAL CO·Filed 1997·Granted Feb 29, 2000·5 cites·16 claims
- 4241US5458083AGrowth method for a rod form of single oxide crystalCHICHIBU CEMENT KK·Filed 1994·Granted Oct 17, 1995·5 cites·11 claims
- 4341US2018351049A1Wavelength conversion phosphorPANASONIC CORP·Filed 2018·Application pending·0 cites
- 4440US8920677B2Scintillator material and scintillation detectorKANO MASATAKA·Filed 2011·Granted Dec 30, 2014·0 cites·4 claims
- 4540US2013003779A1Wireless measuring apparatus and wireless temperature measurement systemFURUYA METAL CO LTD·Filed 2010·Application pending·0 cites
- 4639US7498579B2Scintillator and radiation detector, and radiation inspecting deviceSTELLA CHEMIFA CORP·Filed 2004·Granted Mar 3, 2009·0 cites·12 claims
- 4739US2004099207A1As-grown single crystal of calcium fluorideTOKUYAMA CORP·Filed 2003·Application pending·0 cites
- 4838US2007056508A1Apparatus for producing fluoride crystalFUKUDA TSUGUO·Filed 2004·Application pending·0 cites
- 4938US2007034139A1Method for analyzing impurities (color centers) of fluoride and process for producing material for growing single crystalFUKUDA TSUGUO·Filed 2004·Application pending·0 cites
- 5036US2012057222A1Single crystal of magnesium fluoride, optical member and optical element comprising the sameHASHIMOTO YASUHIRO·Filed 2010·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →