Inventor · disambiguated record
Kai-Tai Chang
Also filed as: CHANG KAI-TAI
29 granted patents·8 pending applications·72 citations·filing 2011–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30MOSAID TECH INCORPORATED2TAIWAN SEMICONDUCTOR MFG2CHANG KAI-TAI1MOSAID TECHNOLOGIES INC1
Top patents by PatentIndex Score
37 records- 0198US11756921B2System and method for bonding semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·6 cites·20 claims
- 0295US11848365B2Semiconductor device structure with source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
- 0395US9324866B2Structure and method for transistor with line end extensionYU SHAO-MING·Filed 2012·Granted Apr 26, 2016·30 cites·15 claims
- 0490US11355605B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 0590US8629040B2Methods for epitaxially growing active regions between STI regionsCHANG KAI-TAI·Filed 2011·Granted Jan 14, 2014·12 cites·12 claims
- 0686US8728906B2Reverse tone STI formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 20, 2014·5 cites·7 claims
- 0786US2025126842A1Separate Epitaxy Layers for Nanowire Stack GAA DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0885US2025344608A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0985US2025351750A1Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1084US12439836B2Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 1184US12356667B2Separate epitaxy layers for nanowire stack GAA deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 1283US12218239B2Structure and method for providing line end extensions for fin-type active regionsMOSAID TECH INCORPORATED·Filed 2023·Granted Feb 4, 2025·0 cites·16 claims
- 1382US9917192B2Structure and method for transistors with line end extensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·3 cites·19 claims
- 1481US12431461B2System and method for bonding semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 1581US9673328B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·17 claims
- 1680US11335604B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·2 cites·20 claims
- 1780US11239365B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·1 cites·20 claims
- 1880US2024395766A1System and Method for Bonding Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1979US11721761B2Structure and method for providing line end extensions for fin-type active regionsMOSAID TECHNOLOGIES INC·Filed 2022·Granted Aug 8, 2023·0 cites·21 claims
- 2079US11038036B2Separate epitaxy layers for nanowire stack GAA deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·1 cites·20 claims
- 2177US12243930B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2277US10573751B2Structure and method for providing line end extensions for fin-type active regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 25, 2020·1 cites·19 claims
- 2377US2025220951A1Structure and method for providing line end extension for fin-type regionsMOSAID TECH INCORPORATED·Filed 2025·Application pending·0 cites
- 2475US12453290B2Memory cell, memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2575US11742405B2Separate epitaxy layers for nanowire stack GAA deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 2673US11849655B2Semiconductor memory devices with electrically isolated stacked bit lines and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 2773US2025176240A1Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2872US11114303B2Gate all around device, method for manufacturing FinFET device, and method for manufacturing gate all around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·1 cites·20 claims
- 2972US2025275490A1Memory device and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3072US2023337558A1Memory cell, semiconductor device including memory cell, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3171US10797174B2Semiconductor device with fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·1 cites·15 claims
- 3270US12324364B2Memory device and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 3368US9177792B2Reverse tone STI formation and epitaxial growth of semiconductor between STI regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·1 cites·20 claims
- 3467US11785870B2Memory cell, semiconductor device including memory cell, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 3567US11605562B2Semiconductor device with fin end spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3663US11444174B2Semiconductor device with Fin end spacer dummy gate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·0 cites·20 claims
- 3759US10886180B2Semiconductor device with fin end spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →