Inventor · disambiguated record
Joseph Neil Merrett
Also filed as: MERRETT JOSEPH · MERRETT JOSEPH N · MERRETT JOSEPH NEIL
22 granted patents·2 pending applications·277 citations·filing 2004–2022
95Inventor score
Top patents by PatentIndex Score
24 records- 0197US8017981B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2010·Granted Sep 13, 2011·31 cites·24 claims
- 0296US7416929B2Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the sameSEMISOUTH LAB INC·Filed 2007·Granted Aug 26, 2008·42 cites·13 claims
- 0395US7294860B2Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the sameUNIV MISSISSIPPI·Filed 2005·Granted Nov 13, 2007·33 cites·14 claims
- 0493US7274083B1Semiconductor device with surge current protection and method of making the sameSEMISOUTH LAB INC·Filed 2006·Granted Sep 25, 2007·28 cites·14 claims
- 0591US10897182B1Integrated, variable flux path electrical generator for turbine enginesUS GOV AIR FORCE·Filed 2020·Granted Jan 19, 2021·10 cites·6 claims
- 0690US7977713B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSEMISOUTH LAB INC·Filed 2008·Granted Jul 12, 2011·16 cites·24 claims
- 0790US7556994B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Jul 7, 2009·18 cites·28 claims
- 0888US7560325B1Methods of making lateral junction field effect transistors using selective epitaxial growthSEMISOUTH LAB INC·Filed 2008·Granted Jul 14, 2009·17 cites·29 claims
- 0985US7820511B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2007·Granted Oct 26, 2010·10 cites·12 claims
- 1084US7314799B2Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingSEMISOUTH LAB INC·Filed 2005·Granted Jan 1, 2008·9 cites·33 claims
- 1184US7202528B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSEMISOUTH LAB INC·Filed 2004·Granted Apr 10, 2007·31 cites·90 claims
- 1282US7242040B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2006·Granted Jul 10, 2007·9 cites·15 claims
- 1373US8502282B2Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of makingSANKIN IGOR·Filed 2011·Granted Aug 6, 2013·3 cites·20 claims
- 1471US12113146B2Optically controlled field effect transistorUS GOV AIR FORCE·Filed 2022·Granted Oct 8, 2024·0 cites·12 claims
- 1571US7119380B2Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistorsSEMISOUTH LAB INC·Filed 2004·Granted Oct 10, 2006·14 cites·12 claims
- 1661US7960198B2Method of making a semiconductor device with surge current protectionSEMISOUTH LAB·Filed 2007·Granted Jun 14, 2011·3 cites·16 claims
- 1760US7510921B2Self-aligned silicon carbide semiconductor devices and methods of making the sameSEMISOUTH LAB INC·Filed 2007·Granted Mar 31, 2009·2 cites·15 claims
- 1858US12132130B2Stacked thin-film photoconductive semiconductor switchUS GOV AIR FORCE·Filed 2022·Granted Oct 29, 2024·0 cites·11 claims
- 1955US7470967B2Self-aligned silicon carbide semiconductor devices and methods of making the sameSEMISOUTH LAB INC·Filed 2005·Granted Dec 30, 2008·1 cites·13 claims
- 2049US2008061362A1Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingSEMISOUTH LAB INC·Filed 2007·Application pending·0 cites
- 2146US8269262B2Vertical junction field effect transistor with mesa termination and method of making the sameSANKIN IGOR·Filed 2007·Granted Sep 18, 2012·0 cites·20 claims
- 2245US8729628B2Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of makingMERRETT JOSEPH NEIL·Filed 2012·Granted May 20, 2014·0 cites·31 claims
- 2344US2012309154A1Vertical junction field effect transistor with mesa termination and method of making the sameSANKIN IGOR·Filed 2012·Application pending·0 cites
- 2443US8507335B2Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of makingSANKIN IGOR·Filed 2011·Granted Aug 13, 2013·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →