Inventor · disambiguated record
Kyoung-Yeon Kim
Also filed as: KIM KYOUNG-YEON
8 granted patents·1 pending application·40 citations·filing 2012–2016
83Inventor score
Technology areasH10P
Top patents by PatentIndex Score
9 records- 0193US9117890B2High-electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 25, 2015·17 cites·17 claims
- 0292US9070706B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2012·Granted Jun 30, 2015·10 cites·20 claims
- 0386US9231093B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·8 cites·26 claims
- 0481US8890212B2Normally-off high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 18, 2014·5 cites·18 claims
- 0559US9666706B2Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 30, 2017·0 cites·7 claims
- 0657US9419094B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2016·Granted Aug 16, 2016·0 cites·12 claims
- 0756US9343564B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2015·Granted May 17, 2016·0 cites·7 claims
- 0855US9324852B2Semiconductor device including a gate electrode on a protruding group III-V material layerCHO YOUNG-JIN·Filed 2015·Granted Apr 26, 2016·0 cites·4 claims
- 0942US2013307026A1High electron mobility transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →