Inventor · disambiguated record
Kazunari Hatade
Also filed as: HATADE KAZUNARI
17 granted patents·1 pending application·94 citations·filing 1999–2013
92Inventor score
Top patents by PatentIndex Score
18 records- 0183US6979850B2Semiconductor device capable of avoiding latchup breakdown resulting from negative varation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Dec 27, 2005·19 cites·2 claims
- 0282US7408228B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 5, 2008·10 cites·3 claims
- 0374US7190034B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Mar 13, 2007·6 cites·7 claims
- 0471US7122875B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Oct 17, 2006·17 cites·20 claims
- 0567US8421157B2Semiconductor deviceHATADE KAZUNARI·Filed 2010·Granted Apr 16, 2013·2 cites·8 claims
- 0665US7829955B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Nov 9, 2010·2 cites·10 claims
- 0764US6207993B1Field effect semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 27, 2001·25 cites·12 claims
- 0863US7777279B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Aug 17, 2010·2 cites·5 claims
- 0960US7652350B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jan 26, 2010·2 cites·10 claims
- 1056US7545005B2Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltageMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jun 9, 2009·0 cites·3 claims
- 1154US7180106B2Semiconductor device having enhanced di/dt tolerance and dV/dt toleranceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 20, 2007·5 cites·13 claims
- 1249US8008746B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2011·Granted Aug 30, 2011·0 cites·1 claims
- 1348US8692323B2Semiconductor device with peripheral base region connected to main electrodeHATADE KAZUNARI·Filed 2011·Granted Apr 8, 2014·0 cites·6 claims
- 1448US7902634B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2010·Granted Mar 8, 2011·0 cites·4 claims
- 1548US7745906B2Semiconductor device having spaced unit regions and heavily doped semiconductor layerMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jun 29, 2010·0 cites·6 claims
- 1647US6388280B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 14, 2002·4 cites·12 claims
- 1747US2013248926A1Semiconductor deviceHATADE KAZUNARI·Filed 2013·Application pending·0 cites
- 1846US8183631B2Semiconductor deviceHATADE KAZUNARI·Filed 2006·Granted May 22, 2012·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →