Inventor · disambiguated record
Hyeon Ju An
Also filed as: AN HYEON JU
13 granted patents·1 pending application·25 citations·filing 2006–2021
86Inventor score
Top patents by PatentIndex Score
14 records- 0190US7655533B2Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Feb 2, 2010·15 cites·24 claims
- 0284US11827181B2Movable carrier device for vehiclesHYUNDAI MOTOR CO LTD·Filed 2021·Granted Nov 28, 2023·2 cites·13 claims
- 0370US11148601B2Moving multi console for vehicleHYUNDAI MOTOR CO LTD·Filed 2019·Granted Oct 19, 2021·2 cites·13 claims
- 0469US7846843B2Method for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine patternHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Dec 7, 2010·3 cites·16 claims
- 0562US8178921B2Semiconductor device having reduced standby leakage current and increased driving current and method for manufacturing the sameSHEEN DONG SUN·Filed 2009·Granted May 15, 2012·2 cites·4 claims
- 0659US7687371B2Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formationHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 30, 2010·1 cites·16 claims
- 0753US8354350B2Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the sameHYNIX SEMICONDUCTOR INC·Filed 2012·Granted Jan 15, 2013·0 cites·7 claims
- 0850US8202807B2Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the sameMIN SUNG KYU·Filed 2007·Granted Jun 19, 2012·0 cites·4 claims
- 0950US7501687B2Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formationHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 10, 2009·0 cites·5 claims
- 1049US11034306B2Half-movable console for vehicleHYUNDAI MOTOR CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·11 claims
- 1149US8507665B2Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the sameMIN SUNG KYU·Filed 2012·Granted Aug 13, 2013·0 cites·10 claims
- 1245US7563654B2Method of manufacturing semiconductor device for formation of pin transistorHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Jul 21, 2009·0 cites·19 claims
- 1341US7838414B2Method for manufacturing semiconductor device utilizing low dielectric layer filling gaps between metal linesHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Nov 23, 2010·0 cites·12 claims
- 1438US2009115019A1Semiconductor device having air gap and method for manufacturing the sameLEE HYO SEOK·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →