Inventor · disambiguated record
Veeraraghavan S. Baskar
Also filed as: BASKAR VEERARAGHAVAN S
3 granted patents·0 citations·filing 2018–2020
49Inventor score
Technology areasH10P
Files withIBM3
Top patents by PatentIndex Score
3 records- 0165US10770361B2Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removalIBM·Filed 2020·Granted Sep 8, 2020·0 cites·20 claims
- 0261US10892193B2Controlling active fin height of FinFET deviceIBM·Filed 2019·Granted Jan 12, 2021·0 cites·16 claims
- 0357US10665514B2Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removalIBM·Filed 2018·Granted May 26, 2020·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →