Inventor · disambiguated record
Jui-Tsung Lien
Also filed as: LIEN JUI-TSUNG
10 granted patents·15 citations·filing 2015–2020
83Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10
Top patents by PatentIndex Score
10 records- 0192US10032786B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·8 cites·16 claims
- 0291US9960176B2Nitride-free spacer or oxide spacer for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·6 cites·20 claims
- 0372US11264400B2Nitride-free spacer or oxide spacer for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
- 0465US10847530B2Nitride-free spacer or oxide spacer for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
- 0563US10475805B2Nitride-free spacer or oxide spacer for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 12, 2019·0 cites·20 claims
- 0660US10347649B2Nitride-free spacer or oxide spacer for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 9, 2019·0 cites·20 claims
- 0758US9983257B2Test line patterns in split-gate flash technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·1 cites·20 claims
- 0853US10381358B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 13, 2019·0 cites·20 claims
- 0952US11069419B2Test line letter for embedded non-volatile memory technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 20, 2021·0 cites·20 claims
- 1044US10163522B2Test line letter for embedded non-volatile memory technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →