Inventor · disambiguated record
Bernd Heinemann
Also filed as: HEINEMANN BERND
19 granted patents·2 pending applications·202 citations·filing 1999–2022
94Inventor score
Files withIHP GMBH8INST HALBLEITERPHYSIK GMBH3FOX ALEXANDER1IHP GMBH & MDASH INNOVATIONS F1IHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIV MIKROE1
Top patents by PatentIndex Score
21 records- 0185US6750484B2Silicon germanium hetero bipolar transistorNOKIA CORP·Filed 2002·Granted Jun 15, 2004·36 cites·15 claims
- 0281US8933537B2Bipolar transistor having self-adjusted emitter contactFOX ALEXANDER·Filed 2009·Granted Jan 13, 2015·12 cites·9 claims
- 0381US8035167B2Complementary bipolar semiconductor deviceIHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIV MIKROE·Filed 2007·Granted Oct 11, 2011·13 cites·9 claims
- 0481US7880270B2Vertical bipolar transistorIHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIVE MIKRO·Filed 2005·Granted Feb 1, 2011·17 cites·25 claims
- 0571US7304348B2DMOS transistorIHP GMBH·Filed 2002·Granted Dec 4, 2007·18 cites·13 claims
- 0666US9508824B2Method for fabricating a bipolar transistor having self-aligned emitter contactIHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MI·Filed 2014·Granted Nov 29, 2016·2 cites·17 claims
- 0766US7019341B2Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layerIHP GMBH·Filed 2002·Granted Mar 28, 2006·13 cites·16 claims
- 0866US6800881B2Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact areaIHP GMBH·Filed 2002·Granted Oct 5, 2004·11 cites·16 claims
- 0965US6642553B1Bipolar transistor and method for producing sameINST HALBLEITERPHYSIK GMBH·Filed 1999·Granted Nov 4, 2003·26 cites·21 claims
- 1055US8546249B2Selective growth of polycrystalline silicon-containing semiconductor material on a silicon-containing semiconductor surfaceTILLACK BERND·Filed 2008·Granted Oct 1, 2013·1 cites·15 claims
- 1153US7777255B2Bipolar transistor with raised base connection region and process for the production thereofIHP GMBH & MDASH INNOVATIONS F·Filed 2004·Granted Aug 17, 2010·9 cites·26 claims
- 1253US7205188B2Method for producing high-speed vertical npn bipolar transistors and complementary MOS transistors on a chipIHP GMBH·Filed 2001·Granted Apr 17, 2007·6 cites·12 claims
- 1352US7307336B2BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structureIHP GMBH·Filed 2002·Granted Dec 11, 2007·7 cites·7 claims
- 1451US6627972B1Vertical bipolar transistorINST HALBLEITERPHYSIK GMBH·Filed 1999·Granted Sep 30, 2003·14 cites·5 claims
- 1551US2025374658A1Method for producing bipolar transistors with non-selective base epitaxyIHP GMBH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ INST FUER INNOVATIVE MIKROELE·Filed 2022·Application pending·0 cites
- 1648US6878995B2Cmos-compatible lateral dmos transistor and method for producing such a transistorIHP GMBH·Filed 2001·Granted Apr 12, 2005·4 cites·8 claims
- 1748US2023230793A1Ion beam extraction apparatus and method for creating an ion beamMAX PLANCK GESELLSCHAFT·Filed 2020·Application pending·0 cites
- 1846US7323390B2Semiconductor device and method for production thereofIHP GMBH·Filed 2002·Granted Jan 29, 2008·3 cites·57 claims
- 1940US6740560B1Bipolar transistor and method for producing sameINST HALBLEITERPHYSIK GMBH·Filed 1999·Granted May 25, 2004·7 cites·11 claims
- 2033US7595534B2Layers in substrate wafersIHP GMBH·Filed 2001·Granted Sep 29, 2009·0 cites·10 claims
- 2125US6465318B1Bipolar transistor and method for producing sameINST HALBLEITERPHYSIK FRANFURT·Filed 1999·Granted Oct 15, 2002·3 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →