Inventor · disambiguated record
Christopher S. Olsen
Also filed as: OLSEN CHRISTOPHER · OLSEN CHRISTOPHER S · OLSEN CHRISTOPHER SEAN
89 granted patents·42 pending applications·478 citations·filing 1999–2025
99Inventor score
Files withAPPLIED MATERIALS INC103OLSEN CHRISTOPHER5YOKOTA YOSHITAKA3CONOCOPHILLIPS CO2GANGULY UDAYAN2
Top patents by PatentIndex Score
131 records- 0196US9683308B2Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2014·Granted Jun 20, 2017·8 cites·7 claims
- 0295US11049696B2Dogbone inlet cone profile for remote plasma oxidation chamberAPPLIED MATERIALS INC·Filed 2020·Granted Jun 29, 2021·3 cites·20 claims
- 0394US11959169B2Asymmetric injection for better wafer uniformityAPPLIED MATERIALS INC·Filed 2022·Granted Apr 16, 2024·2 cites·10 claims
- 0494US10861693B2Cleaning methodAPPLIED MATERIALS INC·Filed 2016·Granted Dec 8, 2020·14 cites·20 claims
- 0593US7972441B2Thermal oxidation of silicon using ozoneAPPLIED MATERIALS INC·Filed 2005·Granted Jul 5, 2011·22 cites·7 claims
- 0693US7429540B2Silicon oxynitride gate dielectric formation using multiple annealing stepsAPPLIED MATERIALS INC·Filed 2006·Granted Sep 30, 2008·24 cites·20 claims
- 0792US11610776B2Method of linearized film oxidation growthAPPLIED MATERIALS INC·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0892US11486038B2Asymmetric injection for better wafer uniformityAPPLIED MATERIALS INC·Filed 2020·Granted Nov 1, 2022·3 cites·20 claims
- 0992US10636626B2Dogbone inlet cone profile for remote plasma oxidation chamberAPPLIED MATERIALS INC·Filed 2018·Granted Apr 28, 2020·3 cites·13 claims
- 1092US7910497B2Method of forming dielectric layers on a substrate and apparatus thereforAPPLIED MATERIALS INC·Filed 2007·Granted Mar 22, 2011·27 cites·22 claims
- 1191US9870921B2Cleaning methodAPPLIED MATERIALS INC·Filed 2016·Granted Jan 16, 2018·6 cites·20 claims
- 1290US11732355B2Method and apparatus for supplying improved gas flow to a processing volume of a processing chamberAPPLIED MATERIALS INC·Filed 2019·Granted Aug 22, 2023·5 cites·20 claims
- 1390US6653200B2Trench fill process for reducing stress in shallow trench isolationAPPLIED MATERIALS INC·Filed 2001·Granted Nov 25, 2003·51 cites·19 claims
- 1490US2024301584A1Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1588US7645710B2Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma systemAPPLIED MATERIALS INC·Filed 2007·Granted Jan 12, 2010·13 cites·19 claims
- 1687US8741785B2Remote plasma radical treatment of silicon oxideAPPLIED MATERIALS INC·Filed 2012·Granted Jun 3, 2014·7 cites·5 claims
- 1786US11581408B2Method and apparatus for selective nitridation processAPPLIED MATERIALS INC·Filed 2021·Granted Feb 14, 2023·1 cites·17 claims
- 1886US11501954B2Dogbone inlet cone profile for remote plasma oxidation chamberAPPLIED MATERIALS INC·Filed 2021·Granted Nov 15, 2022·1 cites·20 claims
- 1986US9123758B2Gas injection apparatus and substrate process chamber incorporating sameAPPLIED MATERIALS INC·Filed 2014·Granted Sep 1, 2015·7 cites·18 claims
- 2086US9054048B2NH3 containing plasma nitridation of a layer on a substrateLIU WEI·Filed 2012·Granted Jun 9, 2015·7 cites·16 claims
- 2186US8409353B2Water cooled gas injectorYOKOTA YOSHITAKA·Filed 2011·Granted Apr 2, 2013·6 cites·15 claims
- 2285US11569245B2Growth of thin oxide layer with amorphous silicon and oxidationAPPLIED MATERIALS INC·Filed 2020·Granted Jan 31, 2023·1 cites·20 claims
- 2385US7972933B2Method of selective nitridationAPPLIED MATERIALS INC·Filed 2010·Granted Jul 5, 2011·7 cites·20 claims
- 2485US7078302B2Gate electrode dopant activation method for semiconductor manufacturing including a laser annealAPPLIED MATERIALS INC·Filed 2004·Granted Jul 18, 2006·28 cites·33 claims
- 2584US11501945B2Side inject designs for improved radical concentrationsAPPLIED MATERIALS INC·Filed 2020·Granted Nov 15, 2022·1 cites·14 claims
- 2684US8492292B2Methods of forming oxide layers on substratesYOKOTA YOSHITAKA·Filed 2010·Granted Jul 23, 2013·7 cites·19 claims
- 2783US9514968B2Methods and apparatus for selective oxidation of a substrateAPPLIED MATERIALS INC·Filed 2015·Granted Dec 6, 2016·3 cites·11 claims
- 2883US8043981B2Dual frequency low temperature oxidation of a semiconductor deviceAPPLIED MATERIALS INC·Filed 2010·Granted Oct 25, 2011·6 cites·26 claims
- 2983US7429538B2Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectricAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·8 cites·4 claims
- 3082US10199221B2Cleaning methodAPPLIED MATERIALS INC·Filed 2017·Granted Feb 5, 2019·2 cites·20 claims
- 3182US8168462B2Passivation process for solar cell fabricationBORDEN PETER·Filed 2009·Granted May 1, 2012·7 cites·19 claims
- 3282US7727828B2Method for fabricating a gate dielectric of a field effect transistorAPPLIED MATERIALS INC·Filed 2006·Granted Jun 1, 2010·8 cites·22 claims
- 3381US10837122B2Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2019·Granted Nov 17, 2020·0 cites·19 claims
- 3480US10847337B2Side inject designs for improved radical concentrationsAPPLIED MATERIALS INC·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
- 3580US10049881B2Method and apparatus for selective nitridation processROGERS MATTHEW S·Filed 2012·Granted Aug 14, 2018·4 cites·7 claims
- 3679US7902018B2Fluorine plasma treatment of high-k gate stack for defect passivationAPPLIED MATERIALS INC·Filed 2007·Granted Mar 8, 2011·8 cites·18 claims
- 3779US6313466B1Method for determining nitrogen concentration in a film of nitrided oxide materialPHILIPS ELECTRONICS NA·Filed 1999·Granted Nov 6, 2001·52 cites·22 claims
- 3876US12473644B2Growth of thin oxide layer with silicon nitride and conversionAPPLIED MATERIALS INC·Filed 2024·Granted Nov 18, 2025·0 cites·23 claims
- 3976US12261039B2Method of linearized film oxidation growthAPPLIED MATERIALS INC·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 4076US11948791B2Steam oxidation initiation for high aspect ratio conformal radical oxidationAPPLIED MATERIALS INC·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
- 4176US11087979B2Cleaning methodAPPLIED MATERIALS INC·Filed 2019·Granted Aug 10, 2021·1 cites·20 claims
- 4276US8808564B2Method and apparatus for selective nitridation processAPPLIED MATERIALS INC·Filed 2012·Granted Aug 19, 2014·3 cites·20 claims
- 4376US7888217B2Method for fabricating a gate dielectric of a field effect transistorAPPLIED MATERIALS INC·Filed 2005·Granted Feb 15, 2011·5 cites·36 claims
- 4475US12341032B2Methods of selective oxidation on rapid thermal processing (RTP) chamber with active steam generationAPPLIED MATERIALS INC·Filed 2024·Granted Jun 24, 2025·0 cites·13 claims
- 4575US8323754B2Stabilization of high-k dielectric materialsOLSEN CHRISTOPHER·Filed 2004·Granted Dec 4, 2012·23 cites·6 claims
- 4674US11077410B2Gas injector with baffleAPPLIED MATERIALS INC·Filed 2018·Granted Aug 3, 2021·1 cites·19 claims
- 4774US10636650B2Argon addition to remote plasma oxidationAPPLIED MATERIALS INC·Filed 2018·Granted Apr 28, 2020·1 cites·10 claims
- 4873US10428441B2Method and apparatus for precleaning a substrate surface prior to epitaxial growthAPPLIED MATERIALS INC·Filed 2017·Granted Oct 1, 2019·0 cites·14 claims
- 4973US9728401B2Methods for conformal treatment of dielectric films with low thermal budgetAPPLIED MATERIALS INC·Filed 2014·Granted Aug 8, 2017·2 cites·13 claims
- 5073US9502521B2Multi-layer charge trap silicon nitride/oxynitride layer engineering with interface region controlGANGULY UDAYAN·Filed 2011·Granted Nov 22, 2016·4 cites·11 claims
Showing the top 50 of 131 patent records by PatentIndex Score.
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