Inventor · disambiguated record
Ming-Chi Wu
Also filed as: WU MING-CHI
27 granted patents·4 pending applications·183 citations·filing 1988–2025
95Inventor score
Top patents by PatentIndex Score
31 records- 0196US9985072B1CMOS image sensor with dual damascene grid design having absorption enhancement structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 29, 2018·21 cites·20 claims
- 0295US10553733B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·12 cites·19 claims
- 0393US10879406B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 0491US10868053B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 0591US10510910B2Image sensor with an absorption enhancement semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·6 cites·20 claims
- 0690US10211244B2Image sensor device with reflective structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·5 cites·19 claims
- 0789US10438980B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 8, 2019·4 cites·20 claims
- 0886US11393937B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 0986US10784150B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·3 cites·20 claims
- 1085US10861988B2Image sensor with an absorption enhancement semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 1185US2025351607A1Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US10861989B2Image sensor with an absorption enhancement semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 1384US10153319B2CMOS image sensor with dual damascene grid design having absorption enhancement structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 11, 2018·3 cites·20 claims
- 1484US10056427B1Front side illuminated image sensor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 1583US2023387150A1Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1681US4878117AVideo signal mixing unit for simultaneously displaying video signals having different picture aspect ratios and resolutionsRICOH KK·Filed 1988·Granted Oct 31, 1989·72 cites·8 claims
- 1780US2025329577A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US11990493B2Image sensor device with reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 1975US12453203B2Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2074US11830892B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 28, 2023·0 cites·20 claims
- 2174US11302734B2Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 12, 2022·1 cites·20 claims
- 2274US10707361B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·20 claims
- 2371US11342372B2Image sensor device with reflective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 2471US10734427B2Method for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 2570US12368070B2LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 2669US9984918B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·1 cites·17 claims
- 2767US9502556B2Integrated fabrication of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·2 cites·20 claims
- 2866US6137469AComputer-TV video converting apparatusAVERMEDIA TECH INC·Filed 1997·Granted Oct 24, 2000·41 cites·5 claims
- 2962US10553628B2Image sensor with a high absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 4, 2020·0 cites·20 claims
- 3059US10276427B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·20 claims
- 3147US2016372360A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →