Inventor · disambiguated record
Jeffrey J. Welser
Also filed as: WELSER JEFFREY J · WELSER JEFFREY JOHN
20 granted patents·3 pending applications·2,730 citations·filing 1995–2003
97Inventor score
Top patents by PatentIndex Score
23 records- 0199US6440801B1Structure for folded architecture pillar memory cellIBM·Filed 2000·Granted Aug 27, 2002·199 cites·13 claims
- 0299US5998292AMethod for making three dimensional circuit integrationIBM·Filed 1997·Granted Dec 7, 1999·669 cites·20 claims
- 0398US6114725AStructure for folded architecture pillar memory cellIBM·Filed 1998·Granted Sep 5, 2000·160 cites·11 claims
- 0498US6077745ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jun 20, 2000·277 cites·14 claims
- 0597US6316309B1Method of forming self-isolated and self-aligned 4F-square vertical FET-trench DRAM cellsFiled 2000·Granted Nov 13, 2001·130 cites·5 claims
- 0697US5874760A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Feb 23, 1999·240 cites·10 claims
- 0796US5929477ASelf-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jul 27, 1999·192 cites·9 claims
- 0894US5990509A2F-square memory cell for gigabit memory applicationsIBM·Filed 1997·Granted Nov 23, 1999·160 cites·12 claims
- 0993US6034389ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Mar 7, 2000·154 cites·11 claims
- 1091US6538299B1Silicon-on-insulator (SOI) trench photodiodeIBM·Filed 2000·Granted Mar 25, 2003·59 cites·23 claims
- 1191US6033957A4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolationIBM·Filed 1997·Granted Mar 7, 2000·81 cites·10 claims
- 1289US6137128ASelf-isolated and self-aligned 4F-square vertical fet-trench dram cellsIBM·Filed 1998·Granted Oct 24, 2000·67 cites·12 claims
- 1389US6013548ASelf-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell arrayIBM·Filed 1997·Granted Jan 11, 2000·99 cites·12 claims
- 1488US5559912AWavelength-selective devices using silicon-on-insulatorIBM·Filed 1995·Granted Sep 24, 1996·91 cites·9 claims
- 1580US6069381AFerroelectric memory transistor with resistively coupled floating gateIBM·Filed 1997·Granted May 30, 2000·39 cites·11 claims
- 1675US5895273ASilicon sidewall etchingIBM·Filed 1997·Granted Apr 20, 1999·48 cites·20 claims
- 1773US6583462B1Vertical DRAM having metallic node conductorIBM·Filed 2000·Granted Jun 24, 2003·14 cites·11 claims
- 1873US6204140B1Dynamic random access memoryINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Mar 20, 2001·33 cites·7 claims
- 1951US6700145B1Capacitor with high charge storage capacityIBM·Filed 1999·Granted Mar 2, 2004·12 cites·11 claims
- 2044US6376873B1Vertical DRAM cell with robust gate-to-storage node isolationIBM·Filed 1999·Granted Apr 23, 2002·6 cites·7 claims
- 2136US2001018247A1Process of manufacturing a dynamic random access memory deviceFiled 2001·Application pending·0 cites
- 2233US2005048732A1Method to produce transistor having reduced gate heightIBM·Filed 2003·Application pending·0 cites
- 2330US2001045595A1Ferroelectric memory transistor with resistively coupled floating gateFiled 1999·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →