Assignee

YOON SOON-GIL

KR·1 granted patent·0 citations·filing 2010–2010

Technology mixC23C1 C30B1 H10N1 Y10S1

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1 record

0125US8154907B2Method for fabricating indium (In)-antimony (Sb)-tellurium (Te) nanowires and phase-change memory device comprising the nanowiresYOON SOON-GIL·Filed 2010·Granted Apr 10, 2012·0 cites·4 claims

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