Assignee
YIELD MICROELECTRONICS CORP
TW·23 granted patents·7 pending applications·143 citations·filing 2004–2024
Top patents by PatentIndex Score
30 records- 0192US7423903B2Single-gate non-volatile memory and operation method thereofYIELD MICROELECTRONICS CORP·Filed 2006·Granted Sep 9, 2008·37 cites·7 claims
- 0290US7099192B2Nonvolatile flash memory and method of operating the sameYIELD MICROELECTRONICS CORP·Filed 2004·Granted Aug 29, 2006·81 cites·9 claims
- 0389US10854297B1Operating method of a low current electrically erasable programmable read only memory (EEPROM) arrayYIELD MICROELECTRONICS CORP·Filed 2020·Granted Dec 1, 2020·3 cites·14 claims
- 0487US11424252B2Small-area and low-voltage anti-fuse element and arrayYIELD MICROELECTRONICS CORP·Filed 2020·Granted Aug 23, 2022·2 cites·12 claims
- 0584US11742039B2Small-area side-capacitor read-only memory device, memory array and method for operating the sameYIELD MICROELECTRONICS CORP·Filed 2022·Granted Aug 29, 2023·1 cites·20 claims
- 0679US11502090B2Low-cost and low-voltage anti-fuse arrayYIELD MICROELECTRONICS CORP·Filed 2021·Granted Nov 15, 2022·1 cites·20 claims
- 0778US9240242B1Method for operating low-cost EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2014·Granted Jan 19, 2016·7 cites·20 claims
- 0872US9318208B1Method for operating small-area EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2014·Granted Apr 19, 2016·5 cites·18 claims
- 0969US10141057B1Erasing method of single-gate non-volatile memoryYIELD MICROELECTRONICS CORP·Filed 2017·Granted Nov 27, 2018·2 cites·3 claims
- 1063US10685716B1Method of fast erasing low-current EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2019·Granted Jun 16, 2020·1 cites·14 claims
- 1163US2026013120A1Read-only memory array and read-only memory thereofYIELD MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1259US12327597B2Small-area common-voltage anti-fuse arrayYIELD MICROELECTRONICS CORP·Filed 2023·Granted Jun 10, 2025·0 cites·24 claims
- 1355US12444444B2Multi-write read-only memory arrayYIELD MICROELECTRONICS CORP·Filed 2023·Granted Oct 14, 2025·0 cites·18 claims
- 1450US12575094B2High-speed multi-write read only memory arrayYIELD MICROELECTRONICS CORP·Filed 2023·Granted Mar 10, 2026·0 cites·57 claims
- 1550US11380694B2Low-voltage anti-fuse elementYIELD MICROELECTRONICS CORP·Filed 2020·Granted Jul 5, 2022·0 cites·11 claims
- 1650US7508253B1Charge pump device and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2007·Granted Mar 24, 2009·3 cites·12 claims
- 1749US12446219B2Small-area common-voltage multi-write non-volatile memory arrayYIELD MICROELECTRONICS CORP·Filed 2023·Granted Oct 14, 2025·0 cites·22 claims
- 1848US12328871B2High writing rate antifuse arrayYIELD MICROELECTRONICS CORP·Filed 2021·Granted Jun 10, 2025·0 cites·9 claims
- 1948US2025203858A1Multi-write read-only memory array and read-only memory thereofYIELD MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2045US12250810B2Small-area high-efficiency read-only memory (ROM) array and method for operating the sameYIELD MICROELECTRONICS CORP·Filed 2023·Granted Mar 11, 2025·0 cites·8 claims
- 2144US11004857B1Operating method of an electrically erasable programmable read only memory (EEPROM) cellYIELD MICROELECTRONICS CORP·Filed 2020·Granted May 11, 2021·0 cites·17 claims
- 2244US9601202B2Low voltage difference operated EEPROM and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2016·Granted Mar 21, 2017·0 cites·4 claims
- 2341US9281312B2Non-volatile memory with a single gate-source common terminal and operation method thereofYIELD MICROELECTRONICS CORP·Filed 2014·Granted Mar 8, 2016·0 cites·16 claims
- 2440US2016329104A1Low voltage difference operated eeprom and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2539US2020327944A1Method of fast erasing an eeprom with low-voltages, where ions are implanted at a higher concentration to increase the intensity of the electric field between the gate and the substrate or between the gate and the transistor and thus decrease the required voltage difference for erasing the eepromYIELD MICROELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 2637US2021104279A1Single-gate multiple-time programming non-volatile memory array and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 2736US2007158733A1High-speed low-voltage programming and self-convergent high-speed low-voltage erasing schemes for EEPROMYIELD MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 2835US10643708B1Method for operating low-current EEPROM arrayYIELD MICROELECTRONICS CORP·Filed 2018·Granted May 5, 2020·0 cites·14 claims
- 2935US2020350328A1Single-gate multiple-time programming non-volatile memory and operation method thereofYIELD MICROELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 3034US10242741B1Low voltage difference operated EEPROM and operating method thereofYIELD MICROELECTRONICS CORP·Filed 2017·Granted Mar 26, 2019·0 cites·12 claims
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