Assignee
WU HANMING
CN·2 granted patents·2 citations·filing 2008–2010
Top patents by PatentIndex Score
2 records- 0167US8466050B2Method for dual energy implantation for ultra-shallow junction formation of MOS devicesWU HANMING·Filed 2010·Granted Jun 18, 2013·2 cites·16 claims
- 0247US8106423B2Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistorsWU HANMING·Filed 2008·Granted Jan 31, 2012·0 cites·18 claims
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