Assignee
WORLDWIDE SEMICONDUCTOR MFG
TW·66 granted patents·1 pending application·1,311 citations·filing 1997–2003
Top patents by PatentIndex Score
67 records- 0193US6174769B1Method for manufacturing stacked capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·111 cites·19 claims
- 0286US6281059B1Method of doing ESD protective device ion implant without additional photo maskWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Aug 28, 2001·63 cites·14 claims
- 0384US6343977B1Multi-zone conditioner for chemical mechanical polishing systemWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Feb 5, 2002·27 cites·14 claims
- 0483US6160286AMethod for operation of a flash memory using n+/p-well diodeWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·51 cites·8 claims
- 0582US6172396B1ROM structure and method of manufactureWORLDWIDE SEMICONDUCTOR MFG·Filed 1998·Granted Jan 9, 2001·147 cites·7 claims
- 0680US6432794B1Process for fabricating capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Aug 13, 2002·23 cites·14 claims
- 0778US6143606AMethod for manufacturing split-gate flash memory cellWORLDWIDE SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·37 cites·19 claims
- 0875US6338993B1Method to fabricate embedded DRAM with salicide logic cell structureWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 15, 2002·34 cites·7 claims
- 0975US6159793AStructure and fabricating method of stacked capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·45 cites·16 claims
- 1074US6150235AMethod of forming shallow trench isolation structuresWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Nov 21, 2000·26 cites·16 claims
- 1172US6087695ASource side injection flash EEPROM memory cell with dielectric pillar and operationWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jul 11, 2000·31 cites·9 claims
- 1269US6255164B1EPROM cell structure and a method for forming the EPROM cell structureWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jul 3, 2001·27 cites·10 claims
- 1367US6287957B1Self-aligned contact processWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Sep 11, 2001·33 cites·27 claims
- 1467US6174781B1Dual damascene process for capacitance fabrication of DRAMWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 16, 2001·34 cites·6 claims
- 1566US6228753B1Method of fabricating a bonding pad structure for improving the bonding pad surface qualityWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·34 cites·19 claims
- 1666US6146946AMethod of fabricating a flash memoryWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Nov 14, 2000·26 cites·16 claims
- 1763US6271099B1Method for forming a capacitor of a DRAM cellWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Aug 7, 2001·21 cites·20 claims
- 1863US6187661B1Method for fabricating metal interconnect structureWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Feb 13, 2001·28 cites·15 claims
- 1962US6211569B1Interconnection lines for improving thermal conductivity in integrated circuits and method for fabricating the sameWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·27 cites·10 claims
- 2061US6147005AMethod of forming dual damascene structuresWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Nov 14, 2000·33 cites·22 claims
- 2160US6492069B1Method for forming an attenuated phase-shifting maskWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Dec 10, 2002·11 cites·18 claims
- 2258US6084262AEtox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage currentWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jul 4, 2000·14 cites·5 claims
- 2357US6242303B1Nonvolatile memories with high capacitive-coupling ratioWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·15 cites·20 claims
- 2457US6200881B1Method of forming a shallow trench isolationWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Mar 13, 2001·22 cites·20 claims
- 2557US6187486B1Method of multi-exposure for improving photolithography resolutionWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Feb 13, 2001·18 cites·6 claims
- 2656US6281089B1Method for fabricating an embedded flash memory cellWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Aug 28, 2001·13 cites·18 claims
- 2756US6271083B1Method of forming a dram crown capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Aug 7, 2001·21 cites·17 claims
- 2856US6171928B1Method of fabricating shallow trench insolationWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·20 cites·18 claims
- 2956US6136646AMethod for manufacturing DRAM capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Oct 24, 2000·17 cites·14 claims
- 3055US6479401B1Method of forming a dual-layer anti-reflective coatingWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Nov 12, 2002·21 cites·10 claims
- 3154US6180483B1Structure and fabrication method for multiple crown capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 30, 2001·14 cites·14 claims
- 3254US6162679AMethod of manufacturing DRAM capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 19, 2000·19 cites·20 claims
- 3354US6163482AOne transistor EEPROM cell using ferro-electric spacerWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 19, 2000·14 cites·14 claims
- 3453US6190974B1Method of fabricating a mask ROMWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Feb 20, 2001·4 cites·13 claims
- 3553US6136716AMethod for manufacturing a self-aligned stacked storage node DRAM cellWORLDWIDE SEMICONDUCTOR MFG·Filed 1998·Granted Oct 24, 2000·18 cites·8 claims
- 3651US6211091B1Self-aligned eetching processWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·17 cites·18 claims
- 3751US6143605AMethod for making a DRAM capacitor using a double layer of insitu doped polysilicon and undoped amorphous polysilicon with HSG polysiliconWORLDWIDE SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·12 cites·19 claims
- 3850US6524909B1Self-aligned fabricating process and structure of source line of etox flash memoryWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Feb 25, 2003·5 cites·8 claims
- 3949US6630051B2Auto slurry deliver fine-tune systems for chemical-mechanical-polishing process and method of using the systemWORLDWIDE SEMICONDUCTOR MFG·Filed 2002·Granted Oct 7, 2003·3 cites·6 claims
- 4048US6297144B1Damascene local interconnect processWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Oct 2, 2001·4 cites·8 claims
- 4146US6171956B1Method for improving the thermal conductivity of metal lines in integrated circuitsWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·12 cites·8 claims
- 4245US6647524B1Built-in-self-test circuit for RAMBUS direct RDRAMWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Nov 11, 2003·10 cites·4 claims
- 4345US6162680AMethod for forming a DRAM capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 19, 2000·9 cites·20 claims
- 4444US6165850AMethod of manufacturing mask read-only-memoryWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Dec 26, 2000·8 cites·5 claims
- 4544US6133088AMethod of forming crown-shaped capacitorWORLDWIDE SEMICONDUCTOR MFG·Filed 2000·Granted Oct 17, 2000·2 cites·15 claims
- 4643US6300240B1Method for forming bottom anti-reflective coating (BARC)WORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Oct 9, 2001·14 cites·12 claims
- 4743US6236080B1Method of manufacturing a capacitor for high density DRAMsWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted May 22, 2001·10 cites·20 claims
- 4842US6218308B1Method of manufacturing a contact for a capacitor of high density DRAMsWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Apr 17, 2001·7 cites·20 claims
- 4941US6277751B1Method of planarizationWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·9 cites·9 claims
- 5040US6261906B1Method for forming a flash memory cell with improved drain erase performanceWORLDWIDE SEMICONDUCTOR MFG·Filed 1999·Granted Jul 17, 2001·6 cites·19 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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