Assignee
WON DAE-JOONG
KR·2 granted patents·2 citations·filing 2009–2012
Technology mixH10D2
Top patents by PatentIndex Score
2 records- 0153US8124512B2Methods of forming integrated circuit devices having different gate electrode cross sectionsWON DAE-JOONG·Filed 2009·Granted Feb 28, 2012·2 cites·4 claims
- 0239US8710594B2Integrated circuit devices having conductive structures with different cross sectionsWON DAE-JOONG·Filed 2012·Granted Apr 29, 2014·0 cites·11 claims
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