Assignee
WAVE INC 4
US·10 granted patents·1 pending application·148 citations·filing 2001–2004
Top patents by PatentIndex Score
11 records- 0193US6819871B1Multi-channel optical filter and multiplexer formed from stacks of thin-film layersWAVE INC 4·Filed 2001·Granted Nov 16, 2004·69 cites·22 claims
- 0281US6402905B1System and method for controlling deposition thickness using a mask with a shadow that varies along a radius of a substrateWAVE INC 4·Filed 2001·Granted Jun 11, 2002·21 cites·7 claims
- 0378US6402904B1System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signalWAVE INC 4·Filed 2001·Granted Jun 11, 2002·14 cites·4 claims
- 0472US6723209B2System and method for performing thin film deposition or chemical treatment using an energetic flux of neutral reactive molecular fragments, atoms or radicalsWAVE INC 4·Filed 2002·Granted Apr 20, 2004·12 cites·32 claims
- 0567US6402900B1System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cubeWAVE INC 4·Filed 2001·Granted Jun 11, 2002·8 cites·12 claims
- 0666US6689255B2System and method for making thin-film structures using a stepped profile maskWAVE INC 4·Filed 2002·Granted Feb 10, 2004·6 cites·19 claims
- 0766US6402901B1System and method for performing sputter deposition using a spherical geometryWAVE INC 4·Filed 2001·Granted Jun 11, 2002·6 cites·20 claims
- 0861US6488821B2System and method for performing sputter deposition using a divergent ion beam source and a rotating substrateWAVE INC 4·Filed 2002·Granted Dec 3, 2002·4 cites·4 claims
- 0960US7316764B2System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signalWAVE INC 4·Filed 2004·Granted Jan 8, 2008·4 cites·5 claims
- 1045US7177506B2Method for forming an aligned optical sub-assemblyWAVE INC 4·Filed 2004·Granted Feb 13, 2007·4 cites·26 claims
- 1140US2002130040A1System and method for performing sputter deposition using a devergent ion beam source and a rotating substrateWAVE INC 4·Filed 2001·Application pending·0 cites
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