Assignee
WANG SHIANG-BAU
TW·8 granted patents·40 citations·filing 2010–2013
Top patents by PatentIndex Score
8 records- 0191US8193094B2Post CMP planarization by cluster ION beam etchWANG SHIANG-BAU·Filed 2010·Granted Jun 5, 2012·11 cites·20 claims
- 0289US8598675B2Isolation structure profile for gap fillingWANG SHIANG-BAU·Filed 2011·Granted Dec 3, 2013·9 cites·20 claims
- 0387US8093146B2Method of fabricating gate electrode using a hard mask with spacersWANG SHIANG-BAU·Filed 2010·Granted Jan 10, 2012·8 cites·21 claims
- 0481US8604562B2Post CMP planarization by cluster ion beam etchWANG SHIANG-BAU·Filed 2012·Granted Dec 10, 2013·4 cites·20 claims
- 0576US8518786B2Process for forming a metal oxide semiconductor devicesWANG SHIANG-BAU·Filed 2013·Granted Aug 27, 2013·3 cites·18 claims
- 0675US8389371B2Method of fabricating integrated circuit device, including removing at least a portion of a spacerWANG SHIANG-BAU·Filed 2010·Granted Mar 5, 2013·4 cites·20 claims
- 0762US8404534B2End-to-end gap fill using dielectric filmWANG SHIANG-BAU·Filed 2011·Granted Mar 26, 2013·1 cites·17 claims
- 0851US9142462B2Integrated circuit having a contact etch stop layer and method of forming the sameWANG SHIANG-BAU·Filed 2011·Granted Sep 22, 2015·0 cites·20 claims
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