Assignee
VISHAY SILICONIX
US·70 granted patents·5 pending applications·596 citations·filing 2001–2019
Top patents by PatentIndex Score
75 records- 0196US9589929B2Method for fabricating stack die packageVISHAY SILICONIX·Filed 2013·Granted Mar 7, 2017·28 cites·20 claims
- 0295US7544545B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2005·Granted Jun 9, 2009·27 cites·20 claims
- 0395US7005347B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 28, 2006·74 cites·17 claims
- 0494US9425304B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2014·Granted Aug 23, 2016·14 cites·20 claims
- 0593US7833863B1Method of manufacturing a closed cell trench MOSFETVISHAY SILICONIX·Filed 2008·Granted Nov 16, 2010·20 cites·16 claims
- 0692US7868381B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2007·Granted Jan 11, 2011·22 cites·9 claims
- 0792US7361558B2Method of manufacturing a closed cell trench MOSFETVISHAY SILICONIX·Filed 2005·Granted Apr 22, 2008·19 cites·20 claims
- 0891US9064896B2Transistor structure with feed-through source-to-substrate contactVISHAY SILICONIX·Filed 2013·Granted Jun 23, 2015·9 cites·17 claims
- 0991US7335946B1Structures of and methods of fabricating trench-gated MIS devicesVISHAY SILICONIX·Filed 2004·Granted Feb 26, 2008·43 cites·4 claims
- 1091US7211877B1Chip scale surface mount package for semiconductor device and process of fabricating the sameVISHAY SILICONIX·Filed 2005·Granted May 1, 2007·19 cites·6 claims
- 1191US6906380B1Drain side gate trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2004·Granted Jun 14, 2005·65 cites·20 claims
- 1290US9716166B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 1389US7494876B1Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the sameVISHAY SILICONIX·Filed 2005·Granted Feb 24, 2009·20 cites·8 claims
- 1486US9966330B2Stack die packageVISHAY SILICONIX·Filed 2013·Granted May 8, 2018·8 cites·20 claims
- 1585US10546840B2Method for fabricating stack die packageVISHAY SILICONIX·Filed 2017·Granted Jan 28, 2020·4 cites·20 claims
- 1683US10234486B2Vertical sense devices in vertical trench MOSFETVISHAY SILICONIX·Filed 2015·Granted Mar 19, 2019·3 cites·17 claims
- 1783US8368126B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2008·Granted Feb 5, 2013·11 cites·17 claims
- 1883US7279743B2Closed cell trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2003·Granted Oct 9, 2007·24 cites·13 claims
- 1982US6552889B1Current limiting technique for hybrid power MOSFET circuitsVISHAY SILICONIX·Filed 2001·Granted Apr 22, 2003·30 cites·28 claims
- 2081US7583485B1Electrostatic discharge protection circuit for integrated circuitsVISHAY SILICONIX·Filed 2005·Granted Sep 1, 2009·11 cites·21 claims
- 2181US7344945B1Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistorVISHAY SILICONIX·Filed 2004·Granted Mar 18, 2008·27 cites·16 claims
- 2280US10622994B2Devices and methods for driving a semiconductor switching deviceVISHAY SILICONIX·Filed 2018·Granted Apr 14, 2020·3 cites·31 claims
- 2379US9853140B2Adaptive charge balanced MOSFET techniquesVISHAY SILICONIX·Filed 2012·Granted Dec 26, 2017·4 cites·14 claims
- 2479US9508596B2Processes used in fabricating a metal-insulator-semiconductor field effect transistorVISHAY SILICONIX·Filed 2014·Granted Nov 29, 2016·5 cites·18 claims
- 2578US9882044B2Edge termination for super-junction MOSFETsVISHAY SILICONIX·Filed 2015·Granted Jan 30, 2018·2 cites·6 claims
- 2677US10381473B2High-electron-mobility transistor with buried interconnectVISHAY SILICONIX·Filed 2017·Granted Aug 13, 2019·2 cites·15 claims
- 2777US10224426B2High-electron-mobility transistor devicesVISHAY SILICONIX·Filed 2017·Granted Mar 5, 2019·2 cites·8 claims
- 2877US7880446B2Adaptive frequency compensation for DC-to-DC converterVISHAY SILICONIX·Filed 2006·Granted Feb 1, 2011·9 cites·20 claims
- 2976US9673314B2Semiconductor device with non-uniform trench oxide layerVISHAY SILICONIX·Filed 2015·Granted Jun 6, 2017·2 cites·13 claims
- 3076US8367500B1Method of forming self aligned contacts for a power MOSFETVISHAY SILICONIX·Filed 2003·Granted Feb 5, 2013·18 cites·10 claims
- 3174US10527654B2Vertical sense devices in vertical trench MOSFETVISHAY SILICONIX·Filed 2017·Granted Jan 7, 2020·1 cites·22 claims
- 3274US10444262B2Vertical sense devices in vertical trench MOSFETVISHAY SILICONIX·Filed 2017·Granted Oct 15, 2019·1 cites·19 claims
- 3374US10229988B2Adaptive charge balanced edge terminationVISHAY SILICONIX·Filed 2017·Granted Mar 12, 2019·1 cites·20 claims
- 3473US8697571B2Power MOSFET contact metallizationVISHAY SILICONIX·Filed 2012·Granted Apr 15, 2014·3 cites·6 claims
- 3573US7589396B2Chip scale surface mount package for semiconductor device and process of fabricating the sameVISHAY SILICONIX·Filed 2007·Granted Sep 15, 2009·4 cites·14 claims
- 3672US10229893B2Dual lead frame semiconductor package and method of manufactureVISHAY SILICONIX·Filed 2017·Granted Mar 12, 2019·1 cites·20 claims
- 3772US9761696B2Self-aligned trench MOSFET and method of manufactureVISHAY SILICONIX·Filed 2014·Granted Sep 12, 2017·3 cites·6 claims
- 3871US10651303B2High-electron-mobility transistor devicesVISHAY SILICONIX·Filed 2019·Granted May 12, 2020·1 cites·12 claims
- 3970US10084037B2MOSFET active area and edge termination area charge balanceVISHAY SILICONIX·Filed 2016·Granted Sep 25, 2018·1 cites·20 claims
- 4069US9893168B2Split gate semiconductor device with curved gate oxide profileVISHAY SILICONIX·Filed 2016·Granted Feb 13, 2018·1 cites·9 claims
- 4169US9793706B2Current limiting systems and methodsVISHAY SILICONIX·Filed 2013·Granted Oct 17, 2017·2 cites·16 claims
- 4268US7960947B2Adaptive frequency compensation for DC-to-DC converterVISHAY SILICONIX·Filed 2009·Granted Jun 14, 2011·7 cites·20 claims
- 4367US7612431B2Trench polysilicon diodeVISHAY SILICONIX·Filed 2008·Granted Nov 3, 2009·2 cites·10 claims
- 4466US10903163B2Trench MOSFET with self-aligned body contact with spacerVISHAY SILICONIX·Filed 2016·Granted Jan 26, 2021·1 cites·21 claims
- 4566US7151036B1Precision high-frequency capacitor formed on semiconductor substrateVISHAY SILICONIX·Filed 2003·Granted Dec 19, 2006·15 cites·7 claims
- 4665US6858471B1Semiconductor substrate with trenches for reducing substrate resistanceVISHAY SILICONIX·Filed 2002·Granted Feb 22, 2005·11 cites·38 claims
- 4763US9722041B2Breakdown voltage blocking deviceVISHAY SILICONIX·Filed 2012·Granted Aug 1, 2017·1 cites·20 claims
- 4861US7642164B1Method of forming self aligned contacts for a power MOSFETVISHAY SILICONIX·Filed 2004·Granted Jan 5, 2010·7 cites·10 claims
- 4960US8883580B2Trench metal oxide semiconductor with recessed trench material and remote contactsVISHAY SILICONIX·Filed 2012·Granted Nov 11, 2014·1 cites·6 claims
- 5059US10181523B2Transistor structure with improved unclamped inductive switching immunityVISHAY SILICONIX·Filed 2017·Granted Jan 15, 2019·0 cites·20 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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