Assignee
TSUNO MORIKAZU
0 granted patents·2 pending applications·0 citations·filing 2006–2010
Top patents by PatentIndex Score
2 records- 0142US2010308384A1Metal oxide semiconductor (mos) solid state imaging device that includes a surface layer formed by implanting a high concentration of impurity during creation of a photodiode, and manufacturing method thereofTSUNO MORIKAZU·Filed 2010·Application pending·0 cites
- 0235US2007026544A1Impurity diffusion simulation method, impurity diffusion simulation apparatus, and impurity diffusion simulation programTSUNO MORIKAZU·Filed 2006·Application pending·0 cites
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