Assignee
TESSERA LLC
US·37 granted patents·8 pending applications·36 citations·filing 2019–2024
Top patents by PatentIndex Score
45 records- 0199US11581190B2Method of fabricating semiconductor fins by differentially oxidizing mandrel sidewallsTESSERA LLC·Filed 2020·Granted Feb 14, 2023·4 cites·20 claims
- 0298US11538720B2Stacked transistors with different channel widthsTESSERA LLC·Filed 2020·Granted Dec 27, 2022·5 cites·17 claims
- 0397US11615988B2FinFET devicesTESSERA LLC·Filed 2021·Granted Mar 28, 2023·2 cites·20 claims
- 0497US11574844B2Fabrication of a vertical fin field effect transistor with reduced dimensional variationsTESSERA LLC·Filed 2021·Granted Feb 7, 2023·2 cites·20 claims
- 0596US11776957B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2022·Granted Oct 3, 2023·1 cites·22 claims
- 0696US11699591B2Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logicTESSERA LLC·Filed 2021·Granted Jul 11, 2023·2 cites·20 claims
- 0796US11652161B2Nanosheet channel-to-source and drain isolationTESSERA LLC·Filed 2021·Granted May 16, 2023·2 cites·21 claims
- 0896US11610780B2Alternating hardmasks for tight-pitch line formationTESSERA LLC·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0996US11552077B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2021·Granted Jan 10, 2023·2 cites·25 claims
- 1095US11574864B2Semiconductor device including a porous dielectric layer, and method of forming the semiconductor deviceTESSERA LLC·Filed 2021·Granted Feb 7, 2023·2 cites·21 claims
- 1192US11798852B2Hybrid-channel nano-sheet FETsTESSERA LLC·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 1292US11404560B2Punch through stopper in bulk finFET deviceTESSERA LLC·Filed 2020·Granted Aug 2, 2022·2 cites·16 claims
- 1390US11682715B2Forming nanosheet transistor using sacrificial spacer and inner spacersTESSERA LLC·Filed 2021·Granted Jun 20, 2023·1 cites·20 claims
- 1490US2025142949A1Gate cut with integrated etch stop layerTESSERA LLC·Filed 2024·Application pending·0 cites
- 1589US2025062126A1Self aligned pattern formation post spacer etchback in tight pitch configurationsTESSERA LLC·Filed 2024·Application pending·0 cites
- 1688US12074165B2Gate cut with integrated etch stop layerTESSERA LLC·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 1788US11670510B2Self aligned pattern formation post spacer etchback in tight pitch configurationsTESSERA LLC·Filed 2021·Granted Jun 6, 2023·1 cites·18 claims
- 1887US11710658B2Structure and method to improve FAV RIE process margin and ElectromigrationTESSERA LLC·Filed 2021·Granted Jul 25, 2023·1 cites·18 claims
- 1987US11664375B2Minimizing shorting between FinFET epitaxial regionsTESSERA LLC·Filed 2021·Granted May 30, 2023·1 cites·20 claims
- 2086US11658062B2Air gap spacer formation for nano-scale semiconductor devicesTESSERA LLC·Filed 2019·Granted May 23, 2023·2 cites·27 claims
- 2186US11557589B2Air gap spacer for metal gatesTESSERA LLC·Filed 2020·Granted Jan 17, 2023·1 cites·17 claims
- 2286US2025142872A1Self aligned replacement metal source/drain finfetTESSERA LLC·Filed 2024·Application pending·0 cites
- 2385US11978639B2Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logicTESSERA LLC·Filed 2023·Granted May 7, 2024·0 cites·25 claims
- 2485US11424211B2Package-on-package assembly with wire bonds to encapsulation surfaceTESSERA LLC·Filed 2020·Granted Aug 23, 2022·1 cites·29 claims
- 2584US12106963B2Self aligned pattern formation post spacer etchback in tight pitch configurationsTESSERA LLC·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 2684US11587830B2Self-forming barrier for use in air gap formationTESSERA LLC·Filed 2020·Granted Feb 21, 2023·1 cites·19 claims
- 2784US2024395702A1Semiconductor interconnect structure with double conductorsTESSERA LLC·Filed 2024·Application pending·0 cites
- 2883US12033892B2Structure and method to improve FAV RIE process margin and electromigrationTESSERA LLC·Filed 2023·Granted Jul 9, 2024·0 cites·19 claims
- 2983US11929286B2Two dimension material fin sidewallTESSERA LLC·Filed 2022·Granted Mar 12, 2024·0 cites·21 claims
- 3081US2023013937A1Semiconductor device with reduced via resistanceTESSERA LLC·Filed 2022·Application pending·0 cites
- 3180US11804405B2Method of forming copper interconnect structure with manganese barrier layerTESSERA LLC·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 3279US2022344211A1Selective removal of semiconductor finsTESSERA LLC·Filed 2022·Application pending·0 cites
- 3379US2023299170A1Stable work function for narrow-pitch devicesTESSERA LLC·Filed 2022·Application pending·0 cites
- 3477US11522045B2Semiconductor structures including middle-of-line (MOL) capacitance reduction for self-aligned contact in gate stackTESSERA LLC·Filed 2021·Granted Dec 6, 2022·0 cites·24 claims
- 3577US11488862B2Semiconductor device with reduced via resistanceTESSERA LLC·Filed 2021·Granted Nov 1, 2022·0 cites·19 claims
- 3676USRE50174EStructure and process to tuck fin tips self-aligned to gatesTESSERA LLC·Filed 2022·Granted Oct 15, 2024·0 cites·24 claims
- 3776USRE49954EFabrication of nano-sheet transistors with different threshold voltagesTESSERA LLC·Filed 2021·Granted Apr 30, 2024·0 cites·41 claims
- 3875US11676854B2Selective ILD deposition for fully aligned via with airgapTESSERA LLC·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 3975US11380583B2Forming self-aligned vias and air-gaps in semiconductor fabricationTESSERA LLC·Filed 2021·Granted Jul 5, 2022·0 cites·21 claims
- 4074USRE50494ESelf-forming embedded diffusion barriersTESSERA LLC·Filed 2022·Granted Jul 15, 2025·0 cites·56 claims
- 4174US11424365B2Two dimension material fin sidewallTESSERA LLC·Filed 2020·Granted Aug 23, 2022·0 cites·27 claims
- 4273US12062703B2Self aligned replacement metal source/drain FINFETTESSERA LLC·Filed 2020·Granted Aug 13, 2024·0 cites·20 claims
- 4373US2022320316A1Nanosheet field effect transistors with partial inside spacersTESSERA LLC·Filed 2022·Application pending·0 cites
- 4472US12087685B2Semiconductor interconnect structure with double conductorsTESSERA LLC·Filed 2020·Granted Sep 10, 2024·0 cites·21 claims
- 4564US11456354B2Bulk nanosheet with dielectric isolationTESSERA LLC·Filed 2019·Granted Sep 27, 2022·0 cites·19 claims
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →