Assignee

TECHNOLOGIES AND DEVILES INTER

US·1 granted patent·34 citations·filing 2002–2002

Technology mixC30B1 H10F1 H10H1 H10P1 Y02E1 Y02P1

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0178US6890809B2Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant deviceTECHNOLOGIES AND DEVILES INTER·Filed 2002·Granted May 10, 2005·34 cites·29 claims

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