Assignee
TECHNOLOGIES AND DEVICES INTER
US·23 granted patents·3 pending applications·927 citations·filing 2000–2007
Top patents by PatentIndex Score
26 records- 0197US7501023B2Method and apparatus for fabricating crack-free Group III nitride semiconductor materialsTECHNOLOGIES AND DEVICES INTER·Filed 2004·Granted Mar 10, 2009·57 cites·50 claims
- 0297US6936357B2Bulk GaN and ALGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Aug 30, 2005·80 cites·17 claims
- 0396US6613143B1Method for fabricating bulk GaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 2, 2003·85 cites·27 claims
- 0495US6616757B1Method for achieving low defect density GaN single crystal boulesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Sep 9, 2003·61 cites·27 claims
- 0595US6576054B1Method for fabricating bulk AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Jun 10, 2003·49 cites·31 claims
- 0694US7727333B1HVPE apparatus and methods for growth of indium containing materials and materials and structures grown therebyTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Jun 1, 2010·21 cites·22 claims
- 0793US7279047B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2003·Granted Oct 9, 2007·36 cites·29 claims
- 0893US6656285B1Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Dec 2, 2003·47 cites·18 claims
- 0992US6660083B2Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Dec 9, 2003·48 cites·47 claims
- 1090US6579359B1Method of crystal growth and resulted structuresTECHNOLOGIES AND DEVICES INTER·Filed 2000·Granted Jun 17, 2003·91 cites·24 claims
- 1188US6706119B2Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Mar 16, 2004·31 cites·26 claims
- 1288US6656272B2Method of epitaxially growing submicron group III nitride layers utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Dec 2, 2003·32 cites·30 claims
- 1385US7611586B2Reactor for extended duration growth of gallium containing single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Nov 3, 2009·12 cites·10 claims
- 1484US6573164B2Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Jun 3, 2003·23 cites·35 claims
- 1584US6476420B2P-N homojunction-based structures utilizing HVPE growth III-V compound layersTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Nov 5, 2002·36 cites·14 claims
- 1684US6472300B2Method for growing p-n homojunction-based structures utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Oct 29, 2002·38 cites·36 claims
- 1783US6849862B2III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layerTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Feb 1, 2005·33 cites·51 claims
- 1882US6555452B2Method for growing p-type III-V compound material utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Apr 29, 2003·32 cites·37 claims
- 1981US6562124B1Method of manufacturing GaN ingotsTECHNOLOGIES AND DEVICES INTER·Filed 2000·Granted May 13, 2003·46 cites·14 claims
- 2075US7670435B2Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPETECHNOLOGIES AND DEVICES INTER·Filed 2002·Granted Mar 2, 2010·12 cites·66 claims
- 2175US6559467B2P-n heterojunction-based structures utilizing HVPE grown III-V compound layersTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·19 cites·33 claims
- 2274US6599133B2Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted Jul 29, 2003·20 cites·41 claims
- 2373US6559038B2Method for growing p-n heterojunction-based structures utilizing HVPE techniquesTECHNOLOGIES AND DEVICES INTER·Filed 2001·Granted May 6, 2003·18 cites·36 claims
- 2460US2006280668A1Method and apparatus for fabricating crack-free group III nitride semiconductor materialsTECHNOLOGIES AND DEVICES INTER·Filed 2006·Application pending·0 cites
- 2557US2005164044A1Bulk GaN and AlGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
- 2657US2005244997A1Bulk GaN and AIGaN single crystalsTECHNOLOGIES AND DEVICES INTER·Filed 2005·Application pending·0 cites
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