Assignee
T3MEMORY INC
US·1 granted patent·2 pending applications·0 citations·filing 2016–2016
Top patents by PatentIndex Score
3 records- 0142US2016172585A1An improved method to make of fabricating ic/mram using oxygen ion implantationT3MEMORY INC·Filed 2016·Application pending·0 cites
- 0241US2016163974A1Electric field assisted perpendicular stt-mramT3MEMORY INC·Filed 2016·Application pending·0 cites
- 0337US9583698B2Magnetoresistive element having a novel recording multilayerT3MEMORY INC·Filed 2016·Granted Feb 28, 2017·0 cites·20 claims
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