Assignee
STRAUBINGER THOMAS
DE·3 granted patents·45 citations·filing 2010–2011
Top patents by PatentIndex Score
3 records- 0194US8865324B2Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distributionSTRAUBINGER THOMAS·Filed 2010·Granted Oct 21, 2014·34 cites·7 claims
- 0291US8747982B2Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 10, 2014·10 cites·27 claims
- 0377US8758510B2Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane courseSTRAUBINGER THOMAS·Filed 2011·Granted Jun 24, 2014·1 cites·12 claims
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