Assignee
SPINNAKER SEMICONDUCTOR INC
US·10 granted patents·4 pending applications·492 citations·filing 1999–2009
Top patents by PatentIndex Score
14 records- 0198US6303479B1Method of manufacturing a short-channel FET with Schottky-barrier source and drain contactsSPINNAKER SEMICONDUCTOR INC·Filed 1999·Granted Oct 16, 2001·184 cites·42 claims
- 0297US6744103B2Short-channel schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2002·Granted Jun 1, 2004·114 cites·18 claims
- 0392US6495882B2Short-channel schottky-barrier MOSFET deviceSPINNAKER SEMICONDUCTOR INC·Filed 2001·Granted Dec 17, 2002·45 cites·26 claims
- 0491US6949787B2Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrateSPINNAKER SEMICONDUCTOR INC·Filed 2002·Granted Sep 27, 2005·39 cites·9 claims
- 0589US6974737B2Schottky barrier CMOS fabrication methodSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted Dec 13, 2005·42 cites·21 claims
- 0687US7221019B2Short-channel Schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2006·Granted May 22, 2007·13 cites·5 claims
- 0785US6784035B2Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·27 cites·35 claims
- 0879US7052945B2Short-channel Schottky-barrier MOSFET device and manufacturing methodSPINNAKER SEMICONDUCTOR INC·Filed 2003·Granted May 30, 2006·15 cites·38 claims
- 0969US7294898B2Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2004·Granted Nov 13, 2007·10 cites·46 claims
- 1053US2007007605A1Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrateSPINNAKER SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1152US2010059819A1Power transistor with metal source and method of manufactureSPINNAKER SEMICONDUCTOR INC·Filed 2009·Application pending·0 cites
- 1251US2008079107A1Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrateSPINNAKER SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 1349US2007026590A1Dynamic Schottky barrier MOSFET device and method of manufactureSPINNAKER SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 1448US7291524B2Schottky-barrier mosfet manufacturing method using isotropic etch processSPINNAKER SEMICONDUCTOR INC·Filed 2004·Granted Nov 6, 2007·3 cites·2 claims
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