Assignee
SICOXS CORP
JP·2 granted patents·2 pending applications·17 citations·filing 2017–2023
Top patents by PatentIndex Score
4 records- 0193US10934634B2Polycrystalline SiC substrate and method for manufacturing sameSICOXS CORP·Filed 2017·Granted Mar 2, 2021·15 cites·6 claims
- 0271US10680068B2Semiconductor substrateSICOXS CORP·Filed 2017·Granted Jun 9, 2020·2 cites·16 claims
- 0363US2026027806A1COMPOSITE SUBSTRATE FOR TRANSFERRING SiC SINGLE CRYSTAL, METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE FOR TRANSFERRING SiC SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING SiC BONDED SUBSTRATESICOXS CORP·Filed 2023·Application pending·0 cites
- 0452US2024429047A1Method for producing polycrystalline silicon carbide substrateSICOXS CORP·Filed 2022·Application pending·0 cites
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